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Low temperature photoluminescence from GaAs impinged by mass-separated low-energy C+ ion beams during molecular beam epitaxy

Published online by Cambridge University Press:  22 February 2011

Tsutomu Iida
Affiliation:
On leave from Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, JAPAN. Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, JAPAN
Yunosuke Makita
Affiliation:
Present address: Univereität Konstanz, Fakultät Physik, W-7750 Konstanz, Germany. Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, JAPAN
Stefan Winter
Affiliation:
Present address: Univereität Konstanz, Fakultät Physik, W-7750 Konstanz, Germany. Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, JAPAN
Shinji Kimura
Affiliation:
On leave from Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, JAPAN. Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, JAPAN
Yushin Tsai
Affiliation:
On leave from Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, JAPAN. Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, JAPAN
Yoko Kawasumi
Affiliation:
On leave from Science University of Tokyo, 1-3 Kagurazaka, Shinjuku 162, JAPAN Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, JAPAN
Paul Fons
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, JAPAN
Akimasa Yamada
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, JAPAN
Hajime Shibata
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, JAPAN
Akira Obara
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, JAPAN
Shigeru Niki
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, JAPAN
Shin-ichiro Uekusa
Affiliation:
Meiji University, 1-1-1 Higashi-Mita, Tama, Kawasaki 214, JAPAN
Takeyo Tsukamoto
Affiliation:
Science University of Tokyo, 1-3 Kagurazaka, Shinjuku 162, JAPAN
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Abstract

C-doped GaAs films were prepared by novely a developed, combined ion beam and molecular beam method (CIBMBE) as a function of hyperthermal (30–500 eV) energies (EC+) of carbon ion (C+) beam. Ion beams of a fixed beam current density were impinged during molecular beam epitaxy growth of GaAs at substrate temperature of 550 °C. Low temperature (2 K) photoluminescence (PL) has been used to characterize the samples together with Hall effects measurements at room temperature. Through the spectral evolution of an emission denoted by [g-g]β which is a specific emission relevant to acceptor-acceptor pairs, the activation rate was confirmed to increase with increasing EC+ for EC+ lower than 170 eV. It was explicitly demonstrated that the most effective Ec+ to establish highest activation rate is located at ~170 eV. This growing activation rate was suggested to be attributed to the enhanced migration of both impinged C and host constituent atoms with increasing EC+. This surmise was supported also by Hall effect measurements which revealed the maximum net hole concentration ( |NA-ND| ) for EC+=170 eV. For EC+ higher than ~170 eV, increasing EC+ was found to induce the reduction of activation rate. It was suggested that this observation is ascribed not to the formation of C donors but to the enhanced sputtering effect of impinged C+ ions with increasing EC+.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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