Hostname: page-component-5d59c44645-jb2ch Total loading time: 0 Render date: 2024-03-03T20:25:11.453Z Has data issue: false hasContentIssue false

Low Temperature Oxide and Nitride Film Depositions by Simultaneous Use of Ionized Cluster Beam Source and Microwave Ion Source

Published online by Cambridge University Press:  26 February 2011

Toshinori Takagi
Affiliation:
Ion Beam Engineering Experimental Laboratory Kyoto University, Sakyo, Kyoto 606, Japan
Gikan H. Takaoka
Affiliation:
Ion Beam Engineering Experimental Laboratory Kyoto University, Sakyo, Kyoto 606, Japan
Junzo Ishikawa
Affiliation:
Department of Electronics
Get access

Abstract

Aluminum oxide (A12O3), nitride(A1N) and silicon nitride(SiN) films were prepared at a low substrate temperature of 100°C. Film resistivity was higher than 5x1013 Ω-cm and the breakdown voltage was greater than 3x10° V/cm. The films deposited on sapphire and silicon substrates were very flat, and were chemically and thermally stable. The A1-O, A1-N and Si-N bonds could be formed effectively by using both ionized clusters and reactive gas ions, and transparent and good quality films were obtained. Through these results, the simultaneous use of an ionized cluster beam (ICB) system and a microwave ion source was found to have a high potential for preparing oxide and nitride films at a low substrate temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Knoll, R.W. and Bradley, E.R., Thin Solid Films 177, 201 (1984).Google Scholar
2 Este, G., Surridge, R. and Westwood, W.D., J. Vac. Sei. Technol. A4(3), 989 (1986).Google Scholar
3 Liao, A.S.H., Leheny, R.F., Hahory, R.E. and DeWinter, J.C., IEEE Electron Devices Lett., EDL–2, 288 (1981).Google Scholar
4 Takagi, T., Yamada, I. and Sasaki, A., Proc. 4th Intern. Conf. on Ion Implantation in Semiconductors and Other Materials, Osaka, (Plenum Press, New York, 1975) p.275.Google Scholar
5 Takagi, T., Yamada, I., Sasaki, A. and Ishibashi, T., IEEE Trans, on Electron Devices, ED–20(11), 1110 (1973).Google Scholar
6 Martin, P.J., J.Mater.Sci. 21, 1 (1986).Google Scholar
7 Harper, J.E., Cuomo, J.J. and Hentzell, H.T.G., J.Appl.Phys. 58, 550 (1985).Google Scholar
8 Takagi, T., Vacuum 36(Nos.1-31 27 (1986).Google Scholar
9 Takagi, T., Z. Phys. D - Atoms, Molecules and Clusters 3, 271 (1986).Google Scholar
10 Ishikawa, J., Takeiri, Y. and Takagi, T., Rev. Sci. Instrum. 55, 449 (1984).Google Scholar
11 Yamada, I., Nagai, I., Horie, M. and Takagi, T., J.Appl.Phys. 54, 1583 (1983).Google Scholar
12 Takaoka, H., Yoshimura, T. and Takagi, T., Proc. 8th Symp. on ISIAT'84, Tokyo (The Res. Group of Ion Eng., Kyoto Univ, 1984) P.263.Google Scholar
13 Dorda, G. and Pulver, P., Phys. Status. Solid 1, 71 (1970).Google Scholar
14 Matsuo, S. and Kiuchi, K., Jpn. J. Appl. Phys. 22, L210 (1983).Google Scholar