Skip to main content Accessibility help
×
Home
Hostname: page-component-65dc7cd545-k2tdd Total loading time: 0.186 Render date: 2021-07-25T07:41:19.016Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Low Temperature Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy

Published online by Cambridge University Press:  01 February 2011

Hai-Ping Liu
Affiliation:
Department of Material Science and Engineering, National Cheng-Kung University, Tainan, Taiwan, ROC
In-Gann Chen
Affiliation:
Department of Material Science and Engineering, National Cheng-Kung University, Tainan, Taiwan, ROC
Jenq-Dar Tsay
Affiliation:
Opto-Electronics & System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan, ROC
Wen-Yueh Liu
Affiliation:
Opto-Electronics & System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan, ROC
Yih-Der Guo
Affiliation:
Opto-Electronics & System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan, ROC
Jung Tsung Hsu
Affiliation:
Opto-Electronics & System Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan, ROC
Get access

Abstract

The low temperature growth of GaN crystal using epitaxy lateral overgrowth (ELO) on SiO2 dot pattern below 900°C by hydride vapor phase epitaxy (HVPE) have been studied. It is observed that the growth rate of GaN hexagonal pyramidal crystals along [1101] direction increases as growth temperature decreases. At low temperature of ∼ 850°C, hexagonal GaN columnar crystals with high index facet at the top can be observed. It is proposed that the surface diffusion length of precursors, such as NH3 and GaCl, decreases at lower temperature that reduces the probability of desorption and increase the lifetime. The condensation of Ga liquid droplets on the GaN surface will change the relative stability of {1101} facet. Therefore, the formation of high index planes such as {2122} facet on the top of hexagonal column along with the formation of stacking fault on the (0001) plane can be observed. A detailed study of the effect of growth temperature on the crystal growth mechanism will be presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Nakamura, Shuji, Senoh, Masayuki, Iwasa, Naruhito, and Nagahama, Shin-ichi, Appl. Phys. Lett. 67, 1868 (1995)CrossRefGoogle Scholar
2. Nakamura, Shuji, Senoh, Masayuki, Nagahama, Shin-ichi, Iwasa, Naruhito, Yamada, Takao, Matsushita, Toshio, Sugimoto, Yasunobu, and Kiyoku, Hiroyuki et al. Appl. Phys. Lett. 70, 868 (1997)CrossRefGoogle Scholar
3. Vennegues, P., Beaumont, B., Bousquet, V., Vaille, M., and Gibart, P., J. Appl. phys. 87, 4175 (2000)CrossRefGoogle Scholar
4. Kuan, T. S., Inoki, C. K., Hsu, Y., Harris, D. L., Zhang, R., Gu, S., and Kuech, T. F., Mat. Res. Soc. Sym. Proc, 595, w2.6.16 Google Scholar
5. Crzeogry, Izabella, J. Phys: Condens. Matter 13 6875 (2001)Google Scholar
6. Fareed, R.S. Qhalid, Tottori, S., Nishino, K., Sakai, S., J.Cryst. Growth 200, 348 (1999)CrossRefGoogle Scholar
7. Kelly, Michael K., Vaudo, Robert P., Phanse, Vivek M., Görgens, Lutz, Ambacher, Oliver and Stutzmann, Martin, Jpn. J. Appl. Phys 38, L217 (1999)CrossRefGoogle Scholar
8. Park, Sung S., II-V. Park and Choh, Sung H., Jpn. J. Appl. Phs 39, L1141 (2000)CrossRefGoogle Scholar
9. Motoki, Kensaku, Okahisa, Takuji, Matsumoto, Naoki, Matsushima, Masato, Kimura, Hiroya, Kasai, Hitoshi, Takemoto, Kikurou, Uematsu, Koji, Hirano, Tetsuya, Nakayama, Masahiro, Nakahata, Seiji, Ueno, Masaki, hara, Daijirou, Kumagai, Yoshinao, Koukitu, Akinori and Seki, Hisashi, Jpn. J. Appl. Phs 40, L140 (2001)CrossRefGoogle Scholar
10. Paskova, T., Svedberg, E.B., Madsen, L.D., Yakimova, R., Ivanov, I.G., Henry, A. and Monemar, B., MRS Internet J. Nitride Semicond. Res. 4S1, G3.16 (1999)Google Scholar
11. Kobayahi, Naoki, J. Cryst. Growh 195, 228 (1998)CrossRefGoogle Scholar
12. Hiramatsu, K.., Nishiyama, K., Motogaito, A., Miyake, H., Iyechika, Y. and Maeda, T., Phys. Status Solidi (a) 176, 535 (1999)3.0.CO;2-I>CrossRefGoogle Scholar
13. Koleske, D. D., Wickenden, A. E., Henry, R. L., DeSisto, W. J., and Gorman, R. J., J. Appl. Phys. 84, 1998 (1998)CrossRefGoogle Scholar
14. Wagner, V., Parillaud, O., Buühlmann, H. J., Ilegems, M., Gradecak, S., Stadelmann, P., Riemann, T. and Christen, J., J. Appl. Phys. 92, 1307 (2002).CrossRefGoogle Scholar
15.Rates of Phase Transformations” edited by Doremus, R.H., 1985, academic press, pp.106108 Google Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Low Temperature Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Low Temperature Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Low Temperature Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *