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Low Temperature Fabrication of Poly-Si TFTs using in-situ Chemically Cleaning Method

Published online by Cambridge University Press:  28 February 2011

Naoki Kono
Affiliation:
Tonen Corporation, Corporate R&D Laboratory, 1–3–1 Nishi-tsurugaoka, Ohi-machi, Iruma-gun, Saitama 354, Japan
Tatsuro Nagahara
Affiliation:
Tonen Corporation, Corporate R&D Laboratory, 1–3–1 Nishi-tsurugaoka, Ohi-machi, Iruma-gun, Saitama 354, Japan
Kenji Fujimoto
Affiliation:
Tonen Corporation, Corporate R&D Laboratory, 1–3–1 Nishi-tsurugaoka, Ohi-machi, Iruma-gun, Saitama 354, Japan
Yusaku Kashiwagi
Affiliation:
Tonen Corporation, Corporate R&D Laboratory, 1–3–1 Nishi-tsurugaoka, Ohi-machi, Iruma-gun, Saitama 354, Japan
Hisashi Kakinoki
Affiliation:
Tonen Corporation, Corporate R&D Laboratory, 1–3–1 Nishi-tsurugaoka, Ohi-machi, Iruma-gun, Saitama 354, Japan
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Abstract

Thin film transistors were fabricated using polycrystalline silicon (poly-Si) film which were directly deposited on Corning 7059 glass substrates by plasma chemical vapor deposition method at very low temperature of 450°C. No annealing procedure was carried out in the fabrication process. The dependences of the crystallinity and the electrical properties on the poly-Si film thickness were investigated for three kinds of films deposited under different conditions. These dependences on the film thickness were found to be strongly influenced by the deposition condition, especially the reaction gas pressure. By choosing optimum poly-Si deposition condition carefully, high performance TFTs have been fabricated by this novel method.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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