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Low Temperature CVD Route to Binary and Ternary Diffusion Barrier Nitrides for Cu Metallization

Published online by Cambridge University Press:  10 February 2011

Alain E. Kaloyeros
Affiliation:
New York State Center for Advanced Technology and Physics Department, The University at Albany-SUNY, Albany, NY 12222
Jean Kelsey
Affiliation:
New York State Center for Advanced Technology and Physics Department, The University at Albany-SUNY, Albany, NY 12222
Cindy Goldberg
Affiliation:
New York State Center for Advanced Technology and Physics Department, The University at Albany-SUNY, Albany, NY 12222
Dalaver Anjum
Affiliation:
New York State Center for Advanced Technology and Physics Department, The University at Albany-SUNY, Albany, NY 12222
Xiaomeng Chen
Affiliation:
New York State Center for Advanced Technology and Physics Department, The University at Albany-SUNY, Albany, NY 12222
Jawid Mirza
Affiliation:
New York State Center for Advanced Technology and Physics Department, The University at Albany-SUNY, Albany, NY 12222
Kaushik Kumar
Affiliation:
New York State Center for Advanced Technology and Physics Department, The University at Albany-SUNY, Albany, NY 12222
Barry Arkles
Affiliation:
Gelest, Tullytown, Pennsylvania, 19007
Bin Han
Affiliation:
MKS Instruments, Andover, Massachusetts 01810
John J. Sullivan
Affiliation:
MKS Instruments, Andover, Massachusetts 01810
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Abstract

The identification of viable diffusion barrier/adhesion promoter material and associated deposition processes is a critical factor in the successful development of structurally and electrically reliable copper based metallization schemes. As feature sizes continue shrinking, such materials are expected to delivery enhanced performance at increasingly thinner layers to allow maximum space utilization by the actual conductor. In this respect, Ta and W based binary and ternary nitrides present promising solutions in view of their hardness, chemical inertness, and thermal stability to high temperatures. Additionally, their availability in amorphous form provides the added benefit of inherent absence of grain boundaries, which usually serve as a primary diffusion path. This paper presents finds from the development of low0temperature (,350°C) CVD processes for the growth of ultrathin Ta, W, Ta-Si, and WSinitride layers for sub−0.18 micron device structures. These processes employ novel inorganic and metal-organic source precursors which allow for the in-situ, one-step, growth of binary and ternary nitrides from appropriate mixtures of the corresponding source precursors. Results will also be discussed from diffusion barrier studies which established performance metris for the applicability of such materials in copper interconnect technologies.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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