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Low Temperature CVD of Ru from C6H8Ru(CO)3

Published online by Cambridge University Press:  01 February 2011

Teresa S Lazarz
Affiliation:
slazarz2@uiuc.edu, University of Illinois at Urbana-Champaign, Materials Science and Engineering, Urbana IL 61801, United States
Yu Yang
Affiliation:
yuyang@uiuc.edu, University of Illinois at Urbana-Champaign, Materials Science and Engineering, Urbana, IL, 61801, United States
Navneet Kumar
Affiliation:
nkumar6@uiuc.edu, University of Illinois at Urbana-Champaign, Materials Science and Engineering, Urbana, IL, 61801, United States
Do Young Kim
Affiliation:
dokim2@uiuc.edu, University of Illinois at Urbana-Champaign, Department of Chemistry, Urbana, IL, 61801, United States
Wontae Noh
Affiliation:
noh@uiuc.edu, University of Illinois at Urbana-Champaign, Department of Chemistry, Urbana, IL, 61801, United States
Gregory S Girolami
Affiliation:
ggirolam@uiuc.edu, University of Illinois at Urbana-Champaign, Department of Chemistry, Urbana, IL, 61801, United States
John R Abelson
Affiliation:
abelson@uiuc.edu, University of Illinois at Urbana-Champaign, Materials Science and Engineering, Urbana, IL, 61801, United States
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Abstract

Thin ruthenium films were deposited using chemical vapor deposition from the single-source precursor tricarbonyl(1,3-cyclohexadiene)Ru(0) onto silicon, silicon dioxide and c-plane sapphire substrates in the absence of a carrier gas by thermolysis. Growth rate, resistivity, purity, crystallinity and microstructure were determined. Tricarbonyl(1,3-cyclohexadiene)Ru(0) gave metallic ruthenium films with near bulk resistivities (11-21μΩ-cm), high growth rates (up to 20 nm/min), and nearly featureless microstructures. Nucleation was rapid on all substrates tested. These results suggest that tricarbonyl(1,3-cyclohexadiene)Ru(0) is an excellent, practical precursor to use for practical applications that require depositing thin ruthenium films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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