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Low temperature CVD growth of graphene nano-flakes directly on high K dielectrics

Published online by Cambridge University Press:  02 March 2011

Mark H. Rümmeli
Affiliation:
Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e. V., PF 27 01 16, 01171 Dresden,Germany Technische Universität Dresden, 01062 Dresden, Germany
Alicja Bachmatiuk
Affiliation:
Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e. V., PF 27 01 16, 01171 Dresden,Germany
Arezoo Dianat
Affiliation:
Technische Universität Dresden, 01062 Dresden, Germany
Andrew Scott
Affiliation:
Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e. V., PF 27 01 16, 01171 Dresden,Germany
Felix Börrnert
Affiliation:
Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e. V., PF 27 01 16, 01171 Dresden,Germany
Imad Ibrahim
Affiliation:
Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e. V., PF 27 01 16, 01171 Dresden,Germany Technische Universität Dresden, 01062 Dresden, Germany
Shasha Zhang
Affiliation:
Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e. V., PF 27 01 16, 01171 Dresden,Germany
Ewa Borowiak-Palen
Affiliation:
Zachodniopomorski Uniwersytet Technologiczny, Pulaskiego 10, 70322 Szczecin, Poland
Gianaurelio Cuniberti
Affiliation:
Technische Universität Dresden, 01062 Dresden, Germany Division of IT Convergence Engineering and National Center for Nanomaterials Technology,POSTECH, Pohang 790-784, Republic of Korea
Bernd Büchner
Affiliation:
Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e. V., PF 27 01 16, 01171 Dresden,Germany
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Abstract

The potential of MgO and ZrO2 as catalytically active substrates for graphene formation via thermal CVD is explored. Experimental observations show the growth of single and multi-layer graphene nano-flakes over MgO and ZrO2 at low temperatures. The graphene nano-flakes are found to anchor at step sites. Ab initio calculations indicate step sites are crucial to adsorb and crack acetylene.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

1. Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubunos, S. V., Grigoriava, I. V. and Firsov, A. A., Science 306, 666 (2004).CrossRefGoogle Scholar
2. Jiao, L., Zhang, L., Wang, X., Diankov, G. and Dai, H., Nature 458, 877 (2009).CrossRefGoogle Scholar
3. Stanley, M., Wang, H., Puls, C., Forster, J., Jackson, T. N., McCarthy, K., Clouser, B. and Liu, Y., Applied Physics Letters 90, 143518 (2007).CrossRefGoogle Scholar
4. Lu, Y. H. and Feng, Y.P., Journal of Physical Chemistry C 113, 20841 (2009).CrossRefGoogle Scholar
5. Elias, D. C., Nair, R. R., Mohiuddin, T. M. G., Morozov, S. V., Blake, P., Halsall, M. P., Ferrari, A. C., Boukhvalov, D. W., Katsnelson, M. I., Geim, A. K. and Novoselov, K. S., Science 323, 610 (2009).CrossRefGoogle Scholar
6. Sofo, J. O., Chaudhari, A. S. and Barber, G. D., Physical Review B 75, 153401 (2007).CrossRefGoogle Scholar
7. Lemme, M. C., Echtermeyer, T. J., Baus, M. and Kurz, H., IEEE Electron Device Letters 28, 282 (2007).CrossRefGoogle Scholar
8. Perdew, J. P., Burke, K. and Ernzerhof, M., Physical Review Letters 77, 3865 (1996).CrossRefGoogle Scholar
9. Blöchl, P. E., Physical Review B 50, 17953 (1994).CrossRefGoogle Scholar
10. Kresse, G. and Furthmüller, J., Physical Review B 54, 11169 (1996).CrossRefGoogle Scholar
11. Henkelman, G., Arnaldsson, A. and Jonsson, H., Computational Materials Science 36, 354 (2006).CrossRefGoogle Scholar
12. Monkhorst, H. J. and Pack, J. D., Physical Review B 13, 5188 (1976).CrossRefGoogle Scholar
13. Rümmeli, M. H., Kramberger, C., Grüneis, A., Ayala, P., Gemming, T., Büchner, B. and Pichler, T., Chemistry of Materials 19, 4105 (2007).CrossRefGoogle Scholar
14. Rümmeli, M. H., Bachmatiuk, A., Scott, A., Börrnert, F., Warner, J. H., Hoffmann, V., Lin, J. H., Cuniberti, G. and Büchner, B., ACS Nano 4, 4206 (2010).CrossRefGoogle Scholar
15. Ferrari, A.C., Solid State Communications 143, 47 (2007).CrossRefGoogle Scholar
16. Rümmeli, M. H., Schäffel, F., Kramberger, C., Gemming, T., Bachmatiuk, A., Kalenczuk, R. J., Rellinghaus, B., Büchner, B. and Pichler, T., Journal of the American Chemical Society 129, 15772 (2007).CrossRefGoogle Scholar
17. Rümmeli, M. H., Schäffel, F., Bachmatiuk, A., Adebimpe, D., Trotter, G., Börrnert, F., Scott, A., Coric, E., Sparing, M., Rellinghaus, B., McCormick, P. G., Cuniberti, G., Knupfer, M., Schultz, L. and Büchner, B., ACS Nano 4, 1146 (2010).10.1021/nn9016108CrossRefGoogle Scholar
18. Steiner, S. A. III, Baumann, T. F., Bayer, B. C., Blume, R., Worsley, M. A., MoberlyChan, W. J., Shaw, E. L., Schlögl, R., Hart, A. J., Hofmann, S. and Wardle, B. L., Journal of the American Chemical Society 131, 12144 (2009).CrossRefGoogle Scholar
19. Emtsev, K. V., Bostwick, A., Horn, K., Jobst, J., Kellogg, G. L., Ley, L., McChesney, J. L., Ohta, T., Reshanov, S. A., Röhrl, J., Rotenberg, E., Schmid, A. K., Waldmann, D., Weber, H. B. and Seyller, T., Nature Materials 8, 203 (2009).CrossRefGoogle Scholar
20. Hofmann, S., Csányi, G., Ferrari, A. C., Payne, M. C. and Robertson, J., Physical Review Letters 95, 036101–1 (2005).CrossRefGoogle Scholar
21. Helveg, S., Clopez-Cartes, , Sehested, J., Hansen, P. L., Clausen, B. S., Rostrup-Nielsen, J. R., Abild-Pedersen, F., and Nørskov, J. K., Nature (London) 427, 426 (2004).CrossRefGoogle Scholar
22. Scott, A., Dianat, A., Börrnert, F., Bachmatiuk, A., Zhang, S., Warner, J. H., Borowiak-Palen, E., Knupfer, M., Büchner, B., Cuniberti, G. and Rümmeli, M. H., Applied Physics Letters. submitted.Google Scholar

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Low temperature CVD growth of graphene nano-flakes directly on high K dielectrics
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