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Low Temperature B Activation in SOI Using Optimised Vacancy Engineering Implants

Published online by Cambridge University Press:  01 February 2011

A.J. Smith
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH
B. Colombeau
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH
N. Bennett
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH
R. Gwilliam
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH
N. Cowern
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH
B. Sealy
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH
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Abstract

In this study 300keV and 1MeV Si vacancy engineering implants have been used to optimise the activation of a 2keV 1×1015cm-2 B implant into SOI. Although the two implants generate a similar areal density of excess vacancies in the SOI top layer, Hall Effect measurements show that low temperature activation is possible to a greater level with the 300keV Si co-implant than with the 1MeV implant. Hall and SIMS data are consistent with a high level of activation of the B at 700°C, with no significant diffusion at the metallurgical junction depth.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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