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Low Pressure CVD of GaN from GaCl3 and NH3

Published online by Cambridge University Press:  10 February 2011

M. Topf ,
S. Koynov ,
S. Fischer ,
I. Dirnstorfer ,
W. Kriegseis ,
W. Burkhardt  and
B.K. Meyer
M. Topf
Affiliation:
electronic mail: michael.k.topf@expl. physik.uni-giessen.de
S. Koynov
Affiliation:
Permanent address: CLSENES Bulgarian Academy of Science, 1784 Sofia, Bulgaria
S. Fischer
Affiliation:
Physics Institute, Justus-Liebig-University Giessen, D-35392 Giessen, Germany
I. Dirnstorfer
Affiliation:
Physics Institute, Justus-Liebig-University Giessen, D-35392 Giessen, Germany
W. Kriegseis
Affiliation:
Physics Institute, Justus-Liebig-University Giessen, D-35392 Giessen, Germany
W. Burkhardt
Affiliation:
Physics Institute, Justus-Liebig-University Giessen, D-35392 Giessen, Germany
B.K. Meyer
Affiliation:
Physics Institute, Justus-Liebig-University Giessen, D-35392 Giessen, Germany
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Abstract

We report on the heteroepitaxial growth of GaN from GaCl3 and NH3 on (0001) A12O3 and (0001) 6H-SiC substrates. In order to enable homogeneous growth within the entire deposition zone one has to use low process pressures in the 10-1 mbar range, where still a growth rate of ∼ 2 μm/h can be achieved. We present a simple model to describe our process and explain our observations. A comparison of GaN deposited on different substrates and with GaN buffer layers is given by low temperature Photoluminescence (PL). Furthermore, impurities are traced by secondary ion mass spectroscopy (SIMS).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 307
Copyright
Copyright © Materials Research Society 1997

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References

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