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Localized States in Electron-Irradiated GaAs
Published online by Cambridge University Press: 28 February 2011
Abstract
Band tailing produced by electron irradiation of n-type GaAs at helium temperatures is studied. It has been observed that conductance in the band tailing occurs via localized states as evidenced by the observation of a conductance having a frequency dependence of the form σ⊥ωs where ≈ 1.
Sufficient degree of damage induces variable range hopping, σ ∝ exp (-b/Tl/4) in a defect band. The frequency dependence of the conductivity in this band is very weak.
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- Copyright © Materials Research Society 1992
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