Skip to main content Accessibility help
×
Home
Hostname: page-component-99c86f546-t82dr Total loading time: 0.234 Render date: 2021-11-28T12:44:31.678Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Light-Emitting and Structural Properties of Si-rich HfO2 Thin Films Fabricated by RF Magnetron Sputtering

Published online by Cambridge University Press:  19 November 2013

D. Khomenkov
Affiliation:
Taras Shevchenko National University of Kyiv, Faculty of Physics, 4 Pr. Hlushkov, Kyiv 03022, Ukraine
Y.-T. An
Affiliation:
CIMAP/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen Cedex 4, France
X. Portier
Affiliation:
CIMAP/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen Cedex 4, France
C. Labbe
Affiliation:
CIMAP/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen Cedex 4, France
F. Gourbilleau
Affiliation:
CIMAP/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen Cedex 4, France
L. Khomenkova
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics at NASU, 41 Pr. Nauky, Kyiv 03028, Ukraine
Get access

Abstract

Structural, optical and luminescent properties of Si-rich HfO2 films fabricated by RF magnetron sputtering were investigated versus annealing treatment. Pronounced phase separation process occurred at 950-1100°C and resulted in the formation of hafnia and silica phases, as well as pure silicon clusters. An intense light emission of annealed samples in visible spectral range was obtained under broad band excitation. It was ascribed to exciton recombination inside silicon clusters as well as host defects. To confirm the formation of Si clusters, the structures were co-doped with Er3+ ions and effective light emission at 1.54µm was obtained under non-resonant excitation due to energy transfer from Si clusters towards Er3+ ions. The interaction of Si clusters, host defects and Er3+ ions under is discussed.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

He, G., Zhu, L.Q., Sun, Z.Q., Wan, Q., Zhang, L.D., Progress in Materials Science 56 (2011) 475.CrossRef
Khomenkova, L., Portier, X., Cardin, J., Gourbilleau, F.. Nanotechnology 21 (2010) 285707.CrossRef
Khomenkova, L., Sahu, B.S., Slaoui, A., Gourbilleau, F., Nanoscale Research Letters 6, 172 (2011).
Khoshman, J.M., Khan, A. and Kordesch, M.E., Surf. Coat. Technol., 202, 2500 (2008).CrossRef
Stenzel, O., Wilbrandt, S., Yulin, S., Kaiser, N., Held, M., Tünnermann, A., Biskupek, J. and Kaiser, U., Opt. Mater. Express, 1, 278 (2011).CrossRef
Kirm, M., Aarik, J., Jürgens, M. and Sildos, I., Nucl.Instr.Meth.A, 537, 251 (2005).CrossRef
Smits, K., Grigorjeva, L., Millers, D., Sarakovskis, A., Grabis, J. and Lojkowski, W., J. Lumin., 131, 2058 (2011).
Kiisk, V., Sildos, I., Lange, S., Reedo, V., Ta¨tte, T., Kirm, M. and Aarik, J., Appl. Surf. Sci. 247, 412 (2005).
Liu, L. X., Ma, Z. W., Xie, Y. Z., Su, Y. R., Zhao, H. T., Zhou, M., Zhou, J. Y., Li, J., Xie, E. Q., J. Appl. Phys. 107 (2010) 024309.
Stoneman, C., Esterowitz, L., Opt. Lett. 15 (1990) 486.CrossRef
Feng, L., Wang, J., Tang, Q., Liang, L.F., Liang, H.B., Su, Q., J. Lumin. 124 (2007) 187.CrossRef
Kenyon, A.J., Semicond. Sci. Technol., 20, R65 (2005).
Wojdak, M., Klik, M., Forcales, M., Gusev, O. B., Gregorkiewicz, T., Pacifici, D., Franzò, G., Priolo, F., and Iacona, F., Phys. Rev. B 69, 233315 (2004).
Cueff, S., Labbé, C., Cardin, J., Doualan, J.-L., Khomenkova, L., Hijazi, K., Jambois, O., Garrido, B. and Rizk, R., J. Appl. Phys., 108 (2010), p. 064302
Miniscalco, J., , J. Lightwave Technol. 9 (1991) 234.CrossRef
Righini, G.C., Berneschi, S., Nunzi Conti, G., Pelli, S., Moser, E., Retoux, R., Féron, P., Gonçalves, R.R., Speranza, G., Jestin, Y., Ferrari, M., Chiasera, A., Chiappini, A., Armellini, C.. J. Non-Cryst. Sol. 355 (2009) 1853.
Khomenkova, L., -T.An, Y., Labbé, C., Portier, X., Gourbilleaua, F., ECS Trans., 45 (2012) 119.CrossRef
Richter, H., Wang, Z.P. and Ley, L., Solid State Comm. 39 (1981) 625.CrossRef
Talbot, E., Lardé, R., Gourbilleau, F., Dufour, C., Pareige, P.. Eur. Phys. Lett. 87, (2009) 26004.CrossRef
Khomenkova, L., Korsunska, N., Yukhimchuk, V., Jumayev, B., Torchynska, T., Vivas Hernandez, A., Many, A., Goldstein, Y., Savir, E., Jedrzejewski, J.. J. Lumin., 102-103, (2003) 705.CrossRef
Noh, H.-K., Ruy, B., Choi, E.-A., Bang, J., and Chang, K.J., Appl. Phys. Lett. 95, 082905 (2009).
Cueff, S., Labbé, C., Dierre, B., Fabbri, F., Sekiguchi, T., Portier, X., Rizk, R., , J. Appl. Phys. 108 (2011) 113504.CrossRef
Rozo, C., Fonseca, L. F., J. Phys.: Condens. Matter 20 (2008) 315003 CrossRef
Rozo, C., Jaque, D., Fonseca, L.F., Solé, J.G., Lumin, J.. 128 (2008) 1197.CrossRef
Kanjilal, A., Rebohle, L., Voelskow, M., Skorupa, W., and Helm, M., Appl. Phys. Lett. 94, 051903 (2009).

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Light-Emitting and Structural Properties of Si-rich HfO2 Thin Films Fabricated by RF Magnetron Sputtering
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Light-Emitting and Structural Properties of Si-rich HfO2 Thin Films Fabricated by RF Magnetron Sputtering
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Light-Emitting and Structural Properties of Si-rich HfO2 Thin Films Fabricated by RF Magnetron Sputtering
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *