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Lateral Grain Growth in the Excimer Laser Crystallization of Poly-Si

Published online by Cambridge University Press:  15 February 2011

H. Kuriyama
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573 Giant Electronics Technology Co., Ltd., 1-6-5 Higashinihonbashi, Chuo-ku, Tokyo 103
K. Sano
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
S. Ishida
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
T. Nohda
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
Y. Aya
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
T. Kuwahara
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
S. Noguchi
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
S. Kiyama
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573 Giant Electronics Technology Co., Ltd., 1-6-5 Higashinihonbashi, Chuo-ku, Tokyo 103
S. Tsuda
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
S. Nakano
Affiliation:
Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka 573
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Abstract

We have succeeded in obtaining nondoped, thin poly-Si film (thickness ∼500Å) with excellent crystallinity and large grain size (Maximum grain size ∼4.5 μ m) by an excimer laser annealing Method, which offers the features of low-temperature processing and a short processing time. The grain size distribution shrinks in the region around 1.5 μ m and this poly-Si film exhibits a strong (111) crystallographic orientation. Poly-Si thin film transistors using these films show quite a high field effect mobility of 440cm2/V · s below 600°C process.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

[1] Sameshima, T., Hara, M. and Usui, S., Jpn. J. Appl. Phys. 28, 1789 (1989).CrossRefGoogle Scholar
[2] Kuriyama, H., Kiyama, S., Noguchi, S., Kuwahara, T., Ishida, S., Nohda, T., Sano, K., Iwata, H., Kawata, H., Osumi, M., Tsuda, S., Nakano, S. and Kuwano, Y., Jpn. J. Appl. Phys. 30, 3700 (1991).CrossRefGoogle Scholar
[3] Kuriyama, H., Kiyama, S., Noguchi, S., Kuwahara, T., Ishida, S., Nohda, T., Sano, K., Iwata, H., Tsuda, S. and Nakano, S., Int. Electron Devices Meet. Tech. Dig. p. 563 (1991).Google Scholar
[4] Emoto, F., Senda, K., Fujii, E., Nakamura, A., Yamamoto, A., Uemoto, Y. and Kano, G., IEEE Trans. Electron Devices ED–37. 1462 (1989).Google Scholar
[5] Katoh, T., IEEE Trans. Electron Devices ED–35. 923 (1988).CrossRefGoogle Scholar
[6] Kumomi, H. and Yonehara, T., Appl. Phys. Lett. 44, 3565 (1991).CrossRefGoogle Scholar
[7] Thompson, C. V. and Smith, H. I., Appl. Phys. Lett. 44, 603 (1984).CrossRefGoogle Scholar
[8] Thompson, C. V., J. Appl. Phys. 58, 763 (1985).CrossRefGoogle Scholar

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