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Laser-Annealed Gap Ohmic Contacts for High-Temperature Devices*

Published online by Cambridge University Press:  15 February 2011

O. Eknoyan ,
W. Van Der Hoeven ,
T. Richardson  and
W.A. Porter
O. Eknoyan
Affiliation:
Institute for Solid State Electronics, Texas A&M University, College Station, Tx.; J.A. COQUAT, Sandia Laboratories, Albuquerque, N.M.
W. Van Der Hoeven
Affiliation:
Institute for Solid State Electronics, Texas A&M University, College Station, Tx.; J.A. COQUAT, Sandia Laboratories, Albuquerque, N.M.
T. Richardson
Affiliation:
Institute for Solid State Electronics, Texas A&M University, College Station, Tx.; J.A. COQUAT, Sandia Laboratories, Albuquerque, N.M.
W.A. Porter
Affiliation:
Institute for Solid State Electronics, Texas A&M University, College Station, Tx.; J.A. COQUAT, Sandia Laboratories, Albuquerque, N.M.
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Abstract

The results of successful Nd:YAG laser annealed ohmic contacts on n-type GaP are reported. Comparisons on identical laser and thermal annealed contacts on the same substrates are performed. In addition aging investigations are also studied. The results indicate that laser annealed contacts have far superior electrical characteristics, much better surface morphology and are substantially more stable with aging than the same but thermally alloyed ones.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 289
Copyright
Copyright © Materials Research Society 1981

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Footnotes

*

This work was sponsored by Sandia Laboratories for the Division of Geothermal Energy, U.S. Department of Energy.

References

REFERENCES

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