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Laser-Annealed Gap Ohmic Contacts for High-Temperature Devices*

Published online by Cambridge University Press:  15 February 2011

O. Eknoyan
Affiliation:
Institute for Solid State Electronics, Texas A&M University, College Station, Tx.; J.A. COQUAT, Sandia Laboratories, Albuquerque, N.M.
W. Van Der Hoeven
Affiliation:
Institute for Solid State Electronics, Texas A&M University, College Station, Tx.; J.A. COQUAT, Sandia Laboratories, Albuquerque, N.M.
T. Richardson
Affiliation:
Institute for Solid State Electronics, Texas A&M University, College Station, Tx.; J.A. COQUAT, Sandia Laboratories, Albuquerque, N.M.
W.A. Porter
Affiliation:
Institute for Solid State Electronics, Texas A&M University, College Station, Tx.; J.A. COQUAT, Sandia Laboratories, Albuquerque, N.M.
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Abstract

The results of successful Nd:YAG laser annealed ohmic contacts on n-type GaP are reported. Comparisons on identical laser and thermal annealed contacts on the same substrates are performed. In addition aging investigations are also studied. The results indicate that laser annealed contacts have far superior electrical characteristics, much better surface morphology and are substantially more stable with aging than the same but thermally alloyed ones.

Type
Research Article
Copyright
Copyright © Materials Research Society 1981

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Footnotes

*

This work was sponsored by Sandia Laboratories for the Division of Geothermal Energy, U.S. Department of Energy.

References

1. Coquat, J. A., Palmer, D. W., Eknoyan, O. and van der Hoeven, W. B., IEEE/ECC Proc. No. 30, Semiconductor-Processing, 1980. p. 55.Google Scholar
2. Eknoyan, O., High Temperature Electronics and Instrumentation Seminar Proc., 1979, p. 129.Google Scholar
3. Chaffin, R. J., Sandia Report SAND80–1963, August 1980.Google Scholar
4. Eckhardt, G., Proc. of Laser and Electron Beam Processing of Materials, p. 467, Mat. Res. Soc. Meeting, 1979.CrossRefGoogle Scholar
5. Barnes, P. A. and Cho, A. Y., Appl. Phys. Lett. 33, 651 (1978).CrossRefGoogle Scholar
6. Tandon, J. L., Kilpatrick, C. G., Welch, B. M. and Fleming, P., Proc. of Laser and Electron Beam Processing of Materials, p. 487, Mat. Res. Soc. Meeting, 1979.CrossRefGoogle Scholar
7. Pounds, R. S., Saifi, M. A. and Hahn, W. C. Jr, Solid-State Electron. 17, 245 (1974).CrossRefGoogle Scholar
8. Cox, R. H. and Strack, H., Solid-State Electron. 10, 1213 (1967).CrossRefGoogle Scholar
9. Yu, A. Y. C., Solid-State Electron, 13, 239 (1970).CrossRefGoogle Scholar
10. Burger, H. H., Solid-State Electron, 15, 145 (1972).CrossRefGoogle Scholar
11. Reeves, G. K., Solid-State Electron 23, 487 (1980).CrossRefGoogle Scholar
12. Shih, K. K. and Blum, J. M., Solid-State Electron, 15, 1177 (1972).CrossRefGoogle Scholar

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