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Laser Annealing of Selenium Implxnted InP
Published online by Cambridge University Press: 15 February 2011
Abstract
We have compared the electrical properties of laser and furnace annealed selenium implanted InP. Both annealing methods produce high activities, the best being for anneals in a phosphine ambient which also produces a better surface finish. Reasons for the poorer results from the laser annealed samples have been deduced from Rutherford backscattering experiments.
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- Copyright © Materials Research Society 1982