Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-17T23:30:12.444Z Has data issue: false hasContentIssue false
  • English
  • Français

Large Area Pulsed Laser Deposition of YBCO Thin Films and Buffer Layers on 3-Inch Wafers

Published online by Cambridge University Press:  15 February 2011

M. Lorenz ,
H. Hochmuth ,
H. Börner ,
D. Natusch  and
K. Kreher
M. Lorenz
Affiliation:
Universität Leipzig, Institut für Experimentalphysik II, Linnéstr.5, D-04103 Leipzig, Germany
H. Hochmuth
Affiliation:
Universität Leipzig, Institut für Experimentalphysik II, Linnéstr.5, D-04103 Leipzig, Germany
H. Börner
Affiliation:
Universität Leipzig, Institut für Experimentalphysik II, Linnéstr.5, D-04103 Leipzig, Germany
D. Natusch
Affiliation:
Universität Leipzig, Institut für Experimentalphysik II, Linnéstr.5, D-04103 Leipzig, Germany
K. Kreher
Affiliation:
Universität Leipzig, Institut für Experimentalphysik II, Linnéstr.5, D-04103 Leipzig, Germany
Get access

Abstract

An arrangement for large area PLD on 3-inch wafers is proposed. In order to get a homogeneous stoichiometry and thickness distribution and small variations of superconducting properties on the 3-inch diameter, the substrate is foreseen to be rotated and additionally laterally moved up to 45 mm during deposition whereas the laser plume remains fixed.

YSZ buffer layers showed thickness homogeneity of 1% within 10 mm, of 4% within 2 inch and of 8% within 3 inch diameter, respectively. For in-situ deposited YBCO thin films on r-plane sapphire with YSZ buffer layer we inductively measured within 3 inch diameter values of the critical temperature Tc(90%) from 85.9 K to 86.7 K and values of the critical current density jc(77 K) from 1 × 106 to 2 × 106 A/cm2. However, up to now the degree of epitaxy of the YBCO thin films on r-plane sapphire with YSZ buffer layer is lower compared to YBCO on MgO(100) as determined by Raman spectroscopy. Nevertheless, large area PLD seems to be a very promising technique for homogeneous coating of 3-inch wafers by epitaxial oxide thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 341: Symposium F – Epitaxial Oxide Thin Films and Heterostructures , 1994 , 189
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Utz, B., Kinder, H., in Proc. First European Conference on Applied Superconductivity, Göttingen, Germany, Oct. 4–9, 1993, p.609.Google Scholar
[2] Krüger, U., Kutzner, R., Wördenweber, R. et.al., Appl.Phys.Lett. 62, 1559 (1993).Google Scholar
[3] Foltyn, S.R, Muenchausen, R.E. et.al., Appl.Phys.Lett. 59, 1374 (1991).CrossRefGoogle Scholar
[4] Tian, Y.J., Lu, H.B., Xu, S.F., Yang, G.Z. et.al., Physica C 220, 114 (1994).Google Scholar
[5] Hochmuth, H. and Lorenz, M., Physica C 220, 209 (1994).Google Scholar
[6] Lorenz, M., Börner, H., Hochmuth, H., Unger, K., Physica C 215, 445 (1993).CrossRefGoogle Scholar
[7] Thomsen, C., Wegerer, R., Habermeier, H.U., Cardona, M., Solid State Commun. 83, 199 (1992).CrossRefGoogle Scholar