Skip to main content Accessibility help
×
Home
Hostname: page-component-55597f9d44-ssw5r Total loading time: 0.308 Render date: 2022-08-17T04:50:38.990Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "useRatesEcommerce": false, "useNewApi": true } hasContentIssue true

Key Technologies for FeRAM Backend Module

Published online by Cambridge University Press:  31 January 2011

Tian-Ling Ren
Affiliation:
rentl@mail.tsinghua.edu.cn, Institute of Microelectronics, Tsinghua University, Beijing, China
Ming-Ming Zhang
Affiliation:
zhangmm06@mails.tsinghua.edu.cn, Institute of Microelectronics, Tsinghua University, Beijing, China
Ze Jia
Affiliation:
jiaze@tsinghua.edu.cn, Institute of Microelectronics, Tsinghua University, Beijing, China
Lin-Kai Wang
Affiliation:
wlk04@mails.tsinghua.edu.cn, Institute of Microelectronics, Tsinghua University, Beijing, China
Chao-Gang Wei
Affiliation:
kevin02@tom.com, Institute of Microelectronics, Tsinghua University, Beijing, China
Kan-Hao Xue
Affiliation:
xuekanhao@gmail.com, Institute of Microelectronics, Tsinghua University, Beijing, China
Ying-Jie Zhang
Affiliation:
zhang-yj02@mails.tsinghua.edu.cn, Institute of Microelectronics, Tsinghua University, Beijing, China
Hong Hu
Affiliation:
zhangmm06@gmail.com, Institute of Microelectronics, Tsinghua University, Beijing, China
Dan Xie
Affiliation:
xiedan@tsinghua.edu.cn, Institute of Microelectronics, Tsinghua University, Beijing, China
Li-Tian Liu
Affiliation:
liulitian@mail.tsinghua.edu.cn, Institute of Microelectronics, Tsinghua University, Beijing, China
Get access

Abstract

Ferroelectric random access memory (FeRAM) is believed to be the most promising candidate for the next generation non-volatile memory due to its fast access time and low power consumption. Fabrication technologies of FeRAM can be divided into two parts: CMOS technologies for circuits which are standard and can be shared with traditional IC process line, and process relating to ferroelectric which is separated with CMOS process and defined as backend module. This paper described technologies for integrating ferroelectric capacitors into standard CMOS, mainly about modeling of ferroelectric capacitors and backend fabrication technologies. Hysteresis loop of the ferroelectric capacitor is the basis for FeRAM to store data. Models to describe this characteristic are the key for the design of FeRAM. A transient behavioral ferroelectric capacitor model based on C-V relation for circuit simulation is developed. The arc tangent function is used to describe the hysteresis loop. “Negative capacitance” phenomenon at reversing points of applied voltage is analyzed and introduced to the model to describe transient behaviors of the capacitor. Compact equivalent circuits are introduced to integrate this model into HSPICE for circuit simulation. Ferroelectric materials fabrication, electrodes integration and etching are the main technologies of FeRAM fabrication process. An metal organic chemical vapor deposition (MOCVD) process is developed to fabricate high quality Pb(Zr1-xTix)O3 (PZT) films. Pt is known to cause the fatigue problems when used as electrodes with PZT. Ir is used as electrodes to improve the fatigue property of PZT based capacitors, and mechanism of the fatigue is analyzed. Hard mask is used to reduce the size of the capacitors and damage caused in etching process. In our process, Al2O3 is developed as hard mask, which simplifies the FeRAM backend integration process.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Moore, G.E., Proceedings of the IEEE. 86, 82 (1998).Google Scholar
[2] http://www.intel.com/pressroom/archive/releases/20090210corp.htmGoogle Scholar
[3] Bez, R., Camerlenghi, E., Modelli, A. and Visconti, A., Proceedings of the IEEE. 91, 489 (2003).CrossRefGoogle Scholar
[4] Scott, J.F. and Araujo, C.A., Science. 246, 1400 (1989).CrossRefGoogle Scholar
[5] Lai, S., IEDM. 2003, 255.Google Scholar
[6] Bette, A., Debrosse, J., Gopl, D., Hoeniqschmid, H., Robertazzi, R. and Arndt, C. et al., VLSI Circuits 2003, 217.Google Scholar
[7] Chen, A., Haddad, S., Wu, Y.C., Fang, T.N., Lan, Z.D. and et, S. Acanzino al., IEDM 2005, 746.Google Scholar
[8] McAdams, H., Acklin, R., Blake, T., Fong, J., Liu, D. and Madan, S. et al., VLSI Circuits 2003, 175.Google Scholar
[9] Sheikholeslami, A. and Gulak, P. G., IEEE Trans. Untrason. Ferroelect. Freq. control. 44, 917 (1997).CrossRefGoogle Scholar
[10] Park, B.H., Kang, B.S., Bu, S.D., Noh, T.W., Lee, J. and Jo, W., Nature. 401, 682 (1999).CrossRefGoogle Scholar
[11] Dey, S.K., Payne, D.A., and Budd, K.D., IEEE Trans. Untrason. Ferroelect. Freq. control. 35, 80 (1988).CrossRefGoogle Scholar
[12] and, K.N. Kim Song, Y.J., Microelectron. Reliab. 43, 385 (2003).Google Scholar
[13] Kobayashi, S., Amanuma, K. and Hada, H., IEEE Electron. Dev. Lett. 19, 417 (1998).CrossRefGoogle Scholar
[14] Lee, J.K., Lee, M.S., Hong, S., Lee, W., Lee, Y.K., Shin, S. and Park, Y.S., Jpn. J. Appl. Phys. 41 6690 (2002).CrossRefGoogle Scholar
[15] Angadi, M., Auciello, O., Krauss, A.R. and Gundel, H.W., Appl. Phys. Lett. 77, 2659 (2000).CrossRefGoogle Scholar
[16] Chen, Y. and Mclntyre, P.C., Appl. Phys. Lett. 91, 232906 (2007).CrossRefGoogle Scholar
[17] Nakamura, T., Nakao, Y., Kamisawa, A. and Takasu, H., Appl. Phys. Lett. 77, 1522 (1994).CrossRefGoogle Scholar
[18] Kim, K.N. and Lee, S.Y., J. Appl. Phys., 100, 051604 (2006).Google Scholar
[19] Aoki, K., Fukuda, Y., Numata, K. and Akitoshi, N., Jpn. J. Appl. Phys. 35, 2210 (1996).CrossRefGoogle Scholar
[20] Kim, K. N. and Song, Y.J., Microelectron. Reliab. 43, 385 (2003).CrossRefGoogle Scholar
[21] Song, Y.J., Kim, H.H., Lee, S.Y., Jung, D.J., Koo, B.J. and Lee, J.K., Appl. Phys. Lett. 76, 451 (2000).CrossRefGoogle Scholar
[22] Gerson, R. and Jaffe, H., J. Phys. Chem. Solids. 24, 979 (1963).CrossRefGoogle Scholar
[23] Madhukar, S., Aggarwal, S., Dhote, A.M., Ramesh, R., Krishnan, A. and Keeble, D., J. Appl. Phys. 81, 3543 (1997).CrossRefGoogle Scholar
[24] Pinnow, C.U., Kasko, I., Dehm, C., Jobst, B., Seibt, M. and Geyer, U., J. Vac. Sci. Tech. B 19, 1857 (2001).CrossRefGoogle Scholar
[25] Marks, S., Almerico, J.P., Gay, M.K. and Celii, F.G., Integr. Ferroelect. 59, 333 (2003).CrossRefGoogle Scholar
[26] and, S.Y. Lee Kim, K., IEDM 2002, 547.Google Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Key Technologies for FeRAM Backend Module
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Key Technologies for FeRAM Backend Module
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Key Technologies for FeRAM Backend Module
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *