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Junction Temperature Measurements in Deep-UV Light-Emitting Diodes

Published online by Cambridge University Press:  01 February 2011

Y. Xi ,
J.-Q. Xi ,
Th. Gessmann ,
J. M. Shah ,
J. K. Kim ,
E. F. Schubert ,
A. J. Fischer ,
M. H. Crawford ,
K. H. A. Bogart  and
A. A. Allerman
Y. Xi
Affiliation:
Department of Physics, Applied Physics, and Astronomy
J.-Q. Xi
Affiliation:
Department of Physics, Applied Physics, and Astronomy
Th. Gessmann
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180
J. M. Shah
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180
J. K. Kim
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180
E. F. Schubert
Affiliation:
Department of Physics, Applied Physics, and Astronomy Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180
A. J. Fischer
Affiliation:
Compound Semiconductor Research Laboratory, Sandia National Laboratories, Albuquerque, NM 87185
M. H. Crawford
Affiliation:
Compound Semiconductor Research Laboratory, Sandia National Laboratories, Albuquerque, NM 87185
K. H. A. Bogart
Affiliation:
Compound Semiconductor Research Laboratory, Sandia National Laboratories, Albuquerque, NM 87185
A. A. Allerman
Affiliation:
Compound Semiconductor Research Laboratory, Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

The junction temperature of AlGaN/GaN ultraviolet (UV) Light-Emitting Diodes (LEDs) emitting at 295 nm is measured by using the temperature coefficients of the diode forward voltage and emission peak energy. The high-energy slope of the spectrum is explored to measure the carrier temperature. A linear relation between junction temperature and current is found. Analysis of the experimental methods reveals that the diode-forward voltage is the most accurate method (± 3 °C). A theoretical model for the dependence of the diode junction voltage (Vj) on junction temperature (T) is developed that takes into account the temperature dependence of the energy gap. A thermal resistance of 87.6 K/W is obtained with the AlGaN/GaN LED sample mounted with thermal paste on a heat sink.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E1.7
Copyright
Copyright © Materials Research Society 2005

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References

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