Skip to main content Accessibility help
×
Home
Hostname: page-component-55b6f6c457-qgndx Total loading time: 0.186 Render date: 2021-09-24T15:11:41.998Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

I-V CHARACTERISTICS OF a-Si:H p-i-n Diodes with Uniform and Non-Uniform Defect Distributions

Published online by Cambridge University Press:  17 March 2011

M.A. Kroon
Affiliation:
Delft University of Technology, Lab. of Electronic Components, Technology and Materials – DIMES, P.O. Box 5053, 2600 GB DELFT, the, Netherlands
R.A.C.M.M. van Swaaij
Affiliation:
Delft University of Technology, Lab. of Electronic Components, Technology and Materials – DIMES, P.O. Box 5053, 2600 GB DELFT, the, Netherlands
J.W. Metselaar
Affiliation:
Delft University of Technology, Lab. of Electronic Components, Technology and Materials – DIMES, P.O. Box 5053, 2600 GB DELFT, the, Netherlands
Get access

Abstract

This paper compares a-Si:H p-i-n diodes having a spatially uniform distribution of defect states with diodes in which the defect distribution is non-uniform, i.e. equilibrated according to the Defect-Pool model. Diodes with a uniform defect distribution exhibit a clear dependence of the current-voltage characteristics on the width of the intrinsic region, whereas in equilibrated diodes, this dependence is absent. This difference is explained by comparing the space-charge distribution and the recombination profile of the intrinsic region in both types of diodes.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Chen, I. and Lee, S., J. Appl. Phys. 53, 1045 (1982).CrossRefGoogle Scholar
2. Matsuura, H., Matsuda, A., Okushi, H., and Tanaka, K., J. Appl. Phys. 58, 1578 (1985).CrossRefGoogle Scholar
3. Berkel, C. van, Powell, M.J., Franklin, A.R., and French, I.D., J.Appl. Phys. 73, 5264 (1994).CrossRefGoogle Scholar
4. Hack, M. and Shur, M., J. Appl. Phys. 54, 5858 (1983).CrossRefGoogle Scholar
5. Powell, M.J. and Deane, S.C., Phys. Rev. B. 53, 10121 (1996).CrossRefGoogle Scholar
6. Lemmi, F., J. Non-Cryst Solids. 266–269, 1198 (2000).CrossRefGoogle Scholar
7. Stutzmann, M., Phil. Mag. B. 60, 531 (1989).CrossRefGoogle Scholar
8. Bar-Yam, Y., Adler, D., and Joannopoulos, J.D., Phys. Rev. Lett. 57, 467 (1986).CrossRefGoogle Scholar
9. Branz, H.M. and Crandall, R.S., Solar Cells 29, 159 (1989).CrossRefGoogle Scholar
10. Zeman, M., Tao, G., Trijssenaar, M., Willemen, J.A., Metselaar, J.W., and Schropp, R.E.I., Mat. Res. Soc. Symp. Proc. 377, 639 (1995).CrossRefGoogle Scholar
11. Simmons, J.G. and Taylor, G.W., Phys. Rev. B. 4, 502 (1971).CrossRefGoogle Scholar
12.For simplicity it is assumed that the quasi Fermi-levels for free charge carriers are equal to those for trapped charge; Simmons et al. used quasi-Fermi levels for trapped charge [11].Google Scholar
13. Shockley, W. and Read, W.T. Jr, Phys. Rev. B. 87, 835 (1952); R.N. Hall, Phys. Rev. B. 87, 387 (1952).CrossRefGoogle Scholar
14. Kroon, M.A., Swaaij, R.A.C.M.M. van, Zeman, M., Kuznetsov, V.I., and Metselaar, J.W., Appl. Phys. Lett. 72, 209 (1998).CrossRefGoogle Scholar
15. Biersack, J.P. and Haggmark, L., Nucl. Instrum. Methods 174, 257 (1980).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

I-V CHARACTERISTICS OF a-Si:H p-i-n Diodes with Uniform and Non-Uniform Defect Distributions
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

I-V CHARACTERISTICS OF a-Si:H p-i-n Diodes with Uniform and Non-Uniform Defect Distributions
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

I-V CHARACTERISTICS OF a-Si:H p-i-n Diodes with Uniform and Non-Uniform Defect Distributions
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *