Skip to main content Accessibility help
×
Home
Hostname: page-component-78bd46657c-zhxtg Total loading time: 0.136 Render date: 2021-05-10T05:47:18.912Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Irradiation-Induced Damage and Intermixing of GaAs-Algaas Quantum Wells

Published online by Cambridge University Press:  21 February 2011

H.H. Tan
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra 0200, A.C.T., Australia, hoel09@rsphyl .anu.edu.au
J.S. Williams
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra 0200, A.C.T., Australia, hoel09@rsphyl .anu.edu.au
C. Jagadish
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra 0200, A.C.T., Australia, hoel09@rsphyl .anu.edu.au
P.T. Burke
Affiliation:
School of Physics, University of New South Wales, Sydney, N.S.W. 2052, Australia
M. Gal
Affiliation:
School of Physics, University of New South Wales, Sydney, N.S.W. 2052, Australia
Corresponding
E-mail address:
Get access

Abstract

A comparison of ion irradiation-induced intermixing in GaAs-Al0.54Gao46As quantum well structures with H, O and As ions is investigated by low temperature photoluminescence. Very large energy shifts are observed together with good recovery of the photoluminescence intensities after annealing in samples irradiated with protons. No saturation in the energy shifts is observed in samples irradiated even up to a dose of 4.3 x 1016 cm-2. Similar large shifts with low absorption are also observed in O and As implanted samples but at a significantly lower ion dose. However, both the heavier ions show a saturation effect in the degree of intermixng at higher doses. The degree of intermixing is believed to be a delicate balance among multiple competing processes that occurs across the interface.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below.

References

1 Hirayama, Y., Suzuki, Y., Tarucha, S. and Okamoto, H., Jpn. J. Appl. Phys. 24, p. L516 (1985).CrossRefGoogle Scholar
2 Vieu, C., Defect and Diffusion Forum 119–120, p. 127 (1995).CrossRefGoogle Scholar
3 Cibert, J., Petroff, P.M., Werder, D.J., Pearton, S.J., Gossard, A.C. and English, J.H., Appl. Phys. Lett. 49, p. 223 (1986).CrossRefGoogle Scholar
4 Kash, K., Tell, B., Grabbe, P., Dobisz, E.A., Craighead, H.G. and Tamargo, M.C., J. Appl. Phys. 63, p. 190 (1988).CrossRefGoogle Scholar
5 Redinbo, G.F., Craighead, H.G. and Hong, J.M., J. Appl. Phys. 74, p. 3099 (1993).CrossRefGoogle Scholar
6 Tan, H.H., Jagadish, C., Williams, J.S., Zou, J., Cockayne, D.J.H. and Sikorski, A., J. Appl. Phys. 77, p. 87 (1995).CrossRefGoogle Scholar
7 Tan, H.H., Jagadish, C., Williams, J.S., Zou, J. and Cockayne, D.J.H., J. Appl. Phys. (submitted, Sept. 1995).Google Scholar
8 Ziegler, J.F., Biersack, J.P. and Littmark, U., The stopping and range of ions in solids, edited by Ziegler, J.F. (Pergamon Press, New York, 1985).Google Scholar
9 Elman, B., Koteles, E.S., Melman, P. and Armiento, C.A. J. Appl. Phys. 66, p. 2104 (1989).CrossRefGoogle Scholar
10 Piva, P.G., Poole, P.J., Buchanan, M., Champion, G., Templeton, I., Aers, G.C., Williams, R., Wasilewski, Z.R., Koteles, E.S. and Charbonneau, S., Appl. Phys. Lett. 65, p. 621 (1994).CrossRefGoogle Scholar
11 Deppe, D.G. and Holonyak, N. Jr., J. Appl. Phys. 64, p. R93 (1988).CrossRefGoogle Scholar
12 Peyre, H., Camassel, J., Gillin, W.P., Homewood, K.P. and Grey, R., Matl. Sci. and Eng. B28, p. 332 (1994).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Irradiation-Induced Damage and Intermixing of GaAs-Algaas Quantum Wells
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Irradiation-Induced Damage and Intermixing of GaAs-Algaas Quantum Wells
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Irradiation-Induced Damage and Intermixing of GaAs-Algaas Quantum Wells
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *