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Ir/Au Ohmic Contacts on Bulk, Single-Crystal n-Type ZnO

Published online by Cambridge University Press:  15 March 2011

J.S. Wright
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
R. Khanna
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
L. Stafford
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
B.P. Gila
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
D.P. Norton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611
I.I. Kravchenko
Affiliation:
Department of Physics, University of Florida, Gainesville, Florida 32611
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Purpose: Need for reliable, thermally stable Ohmic metallizations for ZnO. Because of difficulties with current common contact metals, there exists a heavy desire for metals with high melting temperatures and low reactivities.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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