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Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current

Published online by Cambridge University Press:  01 February 2011

Kazuki Nomoto
Affiliation:, HOSEI University, Department of EECE and Research Center for Micro-Nano Technology, 3-11-15 Midori-cho, Koganei, 184-0004, Japan, +81-42-387-5104, +81-42-387-5121
Taku Tajima
Affiliation:, HOSEI University, EECE, 3-11-15 Midori-cho, Koganei, 184-0003, Japan
Tomoyoshi Mishima
Affiliation:, R&D Group, Hitachi Cable Ltd., Tsuchiura, 300-0026, Japan
Masataka Satoh
Affiliation:, HOSEI University, EECE, 3-11-15 Midori-cho, Koganei, 184-0003, Japan
Tohru Nakamura
Affiliation:, HOSEI University, EECE, 3-11-15 Midori-cho, Koganei, 184-0003, Japan
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We demonstrate the realization of compatibility of extremely low gate leakage current and low source resistance with Si ion-implanted (I/I) GaN/AlGaN/GaN surface-stabilized high-electron mobility transistor (HEMT) without any recess etching process. The source/drain regions were formed using Si ion implantation into undoped GaN/AlGaN/GaN on sapphire substrate. Using ion implantation into source/drain (S/D) regions with energy of 80 keV, the performances were significantly improved. On-resistance (Ron) reduced from 105 to 9.2 Ω·mm. Saturation drain current (Idss) and maximum transconductance (gmMAX) increased from 49 to 527 mA/mm and from 13 to 84 mS/mm (Vg=+1V).

Research Article
Copyright © Materials Research Society 2007

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