Ion-Assisted Regrowth of Deposited Si Layers Mechanisms and Morphology
Published online by Cambridge University Press: 25 February 2011
Ion-assisted regrowth of chemical vapor deposited amorphous Si layers was investigated for different cleaning procedures. The process was directly monitored by transient reflectivity measurements. The c-a interface stops at the deposited layer/substrate interface for doses depending on the effectiveness of the cleaning procedure in removing the native oxide. Small concentrations of twins are found in the regrown layer. Their amount is also correlated to the cleaning procedure. In oxygen implanted bare Si samples the ion-induced growth rate is reduced to 0.3 of the normal value at a peak O concentration of 1 X 1021/cm3. The results on the ion-induced regrowth of deposited layers are explained in terms of oxygen profile broadening during irradiation and retardation of the growth for the presence of dissolved O.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 563
- Copyright © Materials Research Society 1989