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Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing

Published online by Cambridge University Press:  01 February 2011

Roberta Nipoti ,
Alberto Carnera ,
Fabio Bergamini ,
Mariaconcetta Canino ,
Antonella Poggi ,
Sandro Solmi  and
Mara Passini
Roberta Nipoti
Affiliation:
nipoti@bo.imm.cnr.it, CNR, IMM, via Gobetti 101, Bologna, N/A, 40129, Italy
Alberto Carnera
Affiliation:
carnera@padova.infm.it, Università di Padova, Dipartimento di Fisica G. Galilei, via Marzolo 8, Padova, N/A, 35131, Italy
Fabio Bergamini
Affiliation:
bergamin@bo.imm.cnr.it, CNR, IMM, via Gobetti 101, Bologna, N/A, 40129, Italy
Mariaconcetta Canino
Affiliation:
canino@bo.imm.cnr.it, Università di Bologna, Dipartimento di Fisica, viale Berti Pichat 6/2, Bologna, N/A, 40127, Italy
Antonella Poggi
Affiliation:
poggi@bo.imm.cnr.it, CNR, IMM, via Gobetti 101, Bologna, N/A, 40129, Italy
Sandro Solmi
Affiliation:
solmi@bo.imm.cnr.it, CNR, IMM, via Gobetti 101, Bologna, N/A, 40129, Italy
Mara Passini
Affiliation:
passini@bo.imm.cnr.it, CNR, IMM, via Gobetti 101, Bologna, N/A, 40129, Italy
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Abstract

Structural, morphological and electrical characteristics of Al-implanted p+/n 4H-SiC diodes are compared for the same implantation process and post implantation annealing with identical stationary and cooling cycles but different heating velocity. Al+ ions were implanted at 400°C, with energies in the range 250-350 keV and total fluence of 1.2×1015 cm−2. Post implantation annealing processes were done at 1600°C for 30 min with a constant heating velocity in the range 7 – 40°C/sec and an abrupt cooling cycle. Gas in the annealing ambient was high purity Ar. The Al depth profile of annealed and as implanted samples were equal except for concentrations below 10E17 cm−3 where the former profiles showed a diffusion tail. With the increase of the heating velocity of the post implantation annealing process, sheet resistance of the Al implanted layer and diode leakage currents decrease while the surface roughness increases.

Keywords

ion-implantationannealingelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B11-01
Copyright
Copyright © Materials Research Society 2006

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