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Ion Damage Production in GaAs/Al0.6Ga0.4As Heterostructures

Published online by Cambridge University Press:  16 February 2011

B.A. Turkot
Affiliation:
University of Illinois, Department of Materials Science & Engineering, Urbana, IL 61801
I.M. Robertson
Affiliation:
University of Illinois, Department of Materials Science & Engineering, Urbana, IL 61801
M.A. Kirk
Affiliation:
Argonne National Laboratory, Argonne, IL 60439
L.E. Rehn
Affiliation:
Argonne National Laboratory, Argonne, IL 60439
P.M. Baldo
Affiliation:
Argonne National Laboratory, Argonne, IL 60439
D.V. Forbes
Affiliation:
University of Illinois, Materials Research Laboratory, Urbana, IL 61801
J.J. Coleman
Affiliation:
University of Illinois, Materials Research Laboratory, Urbana, IL 61801
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Abstract

The non-uniform distribution of damage with depth and the onset of amorphization produced in Al0.6Ga0.4As/GaAs heterostructures by 1.5 MeV Kr+ ion implantation at 77K have been investigated by using a combination of RBS channeling and cross-sectional high-resolution TEM techniques. The extent of damage increases with increasing depth in the Al0.6Ga0.4As layer. This depth dependence of the damage can be correlated with an increase in the number of recoil events with an energy between 30 and 50 keV. We propose that the amorphization of Al0.6Ga0.4As requires the superposition of cascade-type damage on a background population of point defects which is created by implantation with high energy ions.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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