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Ion Beam Induced Crystallization of Amorphous Si from NiSi2 Precipitates: An In Situ Study

Published online by Cambridge University Press:  25 February 2011

F. Fortuna ,
M. -O. Ruault ,
H. Bernas ,
H. Gu  and
C. Colliex
F. Fortuna
Affiliation:
CSNSM-CNRS, Bât. 108, 91405 - Orsay Campus, France.
M. -O. Ruault
Affiliation:
CSNSM-CNRS, Bât. 108, 91405 - Orsay Campus, France.
H. Bernas
Affiliation:
CSNSM-CNRS, Bât. 108, 91405 - Orsay Campus, France.
H. Gu
Affiliation:
Laboratoire de Physique des Solides (URA 2), Université Paris XI, 91405 - Orsay Campus, France.
C. Colliex
Affiliation:
Laboratoire de Physique des Solides (URA 2), Université Paris XI, 91405 - Orsay Campus, France.
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Abstract

By first growing NiSi2 precipitates in a-Si and then irradiating with a 150 keV Si beam, we have studied ion beam induced epitaxial crystallization (IBIEC) of Si initiated at a-Si/NiSi2 precipitate interfaces. The growth shape and its temperature dependence are studied in-beam via in situ transmission electron microscopy. Interface roughening is evidenced. Preliminary results for the Co-Si system are also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 547
Copyright
Copyright © Materials Research Society 1993

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References

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