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Investigations of Non-Micropipe X-Ray Imaged Crystal Defects in SiC Devices

Published online by Cambridge University Press:  15 March 2011

P. G. Neudeck
Affiliation:
NASA Glenn Research Center, M.S. 77-1, 21000 Brookpark Road, Cleveland, OH 44135
M. A. Kuczmarski
Affiliation:
NASA Glenn Research Center, M.S. 77-1, 21000 Brookpark Road, Cleveland, OH 44135
M. Dudley
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, Stony Brook, NY 11794
W. M. Vetter
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, Stony Brook, NY 11794
H. B. Su
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, Stony Brook, NY 11794
L. J. Keys
Affiliation:
NASA Glenn Research Center, M.S. 77-1, 21000 Brookpark Road, Cleveland, OH 44135
A. J. Trunek
Affiliation:
Akima Corporation, Fairview Park, OH 44126
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Abstract

This paper updates on-going experimental and theoretical investigations of non-micropipe defects imaged by synchrotron white beam X-ray topography (SWBXT) in SiC devices and epitaxial layers. Computer-based thermal modeling of screw-dislocation related breakdown in SiC diodes has been initiated to gain insights into internal temperature profiles as a function of microplasma power. A preliminary study of epitaxial 4H- and 6H-SiC p+n mesa diodes indicates that very low angle boundaries, whose electrical properties have not previously been reported, do not significantly impact DC I-V properties (forward and reverse) measured at biases less than 70% of the SiC breakdown field. The presence of very small growth pits on the surface of commercial 4H-SiC epitaxial layers, almost undetectable by high magnification optical microscopy, was revealed by atomic force microscopy and found to correspond to the locations of closed core screw dislocations imaged by SWBXT.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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