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Investigation of Band Tailing in Sputtered ZnO:Al Thin Films Regarding Structural Properties and Impurities

Published online by Cambridge University Press:  04 June 2014

Steffi Schönau
Affiliation:
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institute for Silicon Photovoltaics, Kekuléstr. 5, 12489 Berlin
Florian Ruske
Affiliation:
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institute for Silicon Photovoltaics, Kekuléstr. 5, 12489 Berlin
Sebastian Neubert
Affiliation:
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, PVcomB, Schwarzschildstr. 3, 12489 Berlin
Bernd Rech
Affiliation:
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institute for Silicon Photovoltaics, Kekuléstr. 5, 12489 Berlin
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Abstract

Thin films of pure aluminum doped ZnO and with addition of nitrogen, oxygen and hydrogen have been prepared by magnetron sputtering. The spectral absorption coefficient close to the band gap energy has been determined by spectrophotometry and analyzed regarding band tailing and creation of defect bands. We found, that an improvement of Raman crystallinity under O2- rich growth conditions is not accompanied by a suppression of band tailing as expected. An additional absorption feature evolves for layers grown in N2 containing atmosphere. Doping with hydrogen attenuates sub-band gap absorption.

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Articles
Copyright
Copyright © Materials Research Society 2014 

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References

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