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Intrinsic Resistive Switching in Bulk SiOx Films

Published online by Cambridge University Press:  25 May 2012

Adnan Mehonic
Affiliation:
Department of Electronic & Electrical Engineering, UCL, Torrington Place, London WC1E 7JE, UK
Sébastien Cueff
Affiliation:
CIMAP, UMR CNRS 6252 ENSICAEN, 6 Boulevard Maréchal Juin, 14050 Caen Cedex 4, France
Maciej Wojdak
Affiliation:
Department of Electronic & Electrical Engineering, UCL, Torrington Place, London WC1E 7JE, UK
Stephen Hudziak
Affiliation:
Department of Electronic & Electrical Engineering, UCL, Torrington Place, London WC1E 7JE, UK
Olivier Jambois
Affiliation:
MIND-IN2UB, Dept. Electrònica, Universitat de Barcelona, Martí i Franquès 1, 08028, Barcelona, CAT, Spain
Christophe Labbé
Affiliation:
CIMAP, UMR CNRS 6252 ENSICAEN, 6 Boulevard Maréchal Juin, 14050 Caen Cedex 4, France
Blas Garrido
Affiliation:
MIND-IN2UB, Dept. Electrònica, Universitat de Barcelona, Martí i Franquès 1, 08028, Barcelona, CAT, Spain
Richard Rizk
Affiliation:
CIMAP, UMR CNRS 6252 ENSICAEN, 6 Boulevard Maréchal Juin, 14050 Caen Cedex 4, France
Anthony J. Kenyon
Affiliation:
Department of Electronic & Electrical Engineering, UCL, Torrington Place, London WC1E 7JE, UK
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Abstract

We report a study of resistive switching in a silicon-based memristor/resistive RAM (RRAM) device in which the active layer is silicon-rich silica. The resistive switching phenomenon is an intrinsic property of the silicon-rich oxide layer and does not depend on the diffusion of metallic ions to form conductive paths. Both unipolar and bipolar programming is demonstrated.

Switching exhibits the pinched hysteresis I/V loop characteristic of RRAM/memristive systems, and on/off resistance ratios of 104:1 or higher can be easily achieved. Scanning Tunnelling Microscopy suggests that switchable conductive pathways are 10nm in diameter or smaller.

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Copyright
Copyright © Materials Research Society 2012

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