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Intraband Absorption in Ge/Si Self-Assembled Quantum Dots

Published online by Cambridge University Press:  10 February 2011

P. Boucaud
Affiliation:
LEF, Université Paris XI, UMR CNRS 8622, Bât. 220, 91405 Orsay, France, phill@ief.u-psud.fr
V. Le Thanh
Affiliation:
LEF, Université Paris XI, UMR CNRS 8622, Bât. 220, 91405 Orsay, France
S. Sauvage
Affiliation:
LEF, Université Paris XI, UMR CNRS 8622, Bât. 220, 91405 Orsay, France
T. Brunhes
Affiliation:
LEF, Université Paris XI, UMR CNRS 8622, Bât. 220, 91405 Orsay, France
F. Fortuna
Affiliation:
CSNSM, Université Paris XI, Bait. 108, 91405 Orsay, FRANCE
D. Debarre
Affiliation:
LEF, Université Paris XI, UMR CNRS 8622, Bât. 220, 91405 Orsay, France
D. Bouchier
Affiliation:
LEF, Université Paris XI, UMR CNRS 8622, Bât. 220, 91405 Orsay, France
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Abstract

Mid-infrared intraband absorption in Ge/Si self-assembled quantum dots is reported. The self-assembled quantum dots are grown by ultra-high-vacuum chemical vapor deposition. The intraband absorption is observed using a photoinduced absorption technique. The mid-infrared absorption, which is in-plane polarized, is maximum around 300 meV. The absorption is attributed to a quantum dot hole transition between bound and continuum states. The absorption cross section is deduced from the saturation of the photoinduced intraband absorption. An inplane absorption cross section as large as 2 × 10−13 cm2 is measured for one dot plane.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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