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Interface Roughness, Composition, and Alloying of Low-Order ALAS/GAAS Superlattices Studied by X-Ray Diffraction

Published online by Cambridge University Press:  25 February 2011

W. R. Miller Jr
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899
Joseph G. Pellegrino
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899
James Comas
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899
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Abstract

Low-order, monolayer by monolayer (1×1) AlAs/GaAs superlattices grown by MBE using different growth techniques have been studied by X-ray diffractometry. High-resolution multiple-crystal diffractometry was used to study diffraction features near the [004] peaks due to the substrate and epilayers. Using this technique, we have investigated the effect of growth techniques on the strain and tilt of the superlattices. High-resolution X-ray diffraction (HRXRD) results suggest that the sample grown by migration-enhanced epitaxy (MEE) is more highly strained and has more tilt than the same superlattice sample grown using the interrupted growth (IG) technique.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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