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Intentional Reconstruction of Silicon Network on the Surface and within Sub-Surface by H and Ar

Published online by Cambridge University Press:  15 February 2011

W. Futako
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku. Yokohama, Japan 226
K. Fukutani
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku. Yokohama, Japan 226
I. Shimizu
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku. Yokohama, Japan 226
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Abstract

Silicon thin films were prepared by “Chemical Annealing” where the deposition of thin layer (<3 nm thick) by RF glow discharge of SiH4 and the treatment with hydrogen atoms (H) or triplet state of argon (3Ar) were repeated alternatating. Consequently, wide gap a-Si:H with the gap of 2.1 eV was made by H-treatmentat rather low substrate temperature (Ts<150 °C), while a-Si:H with the gap narrower than 1.6 eV was obtained by the treatment with 3Ar at high Ts (>300 °C), resulting from the release of excessive hydrogen. Both the wider or the narrower gap films exhibited low defect density lower than 1016 cm−3 and obvious improvements in the stability for light soaking.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1. Shirai, H., Das, D., Hanna, J. and Shimizu, I., Appl. Phys. Lett. 59, p.1096 (1991)CrossRefGoogle Scholar
2. Asano, A., Appl. Phys. Lett. 56, p. 53 (1990)CrossRefGoogle Scholar
3. Nakamura, K., Yoshino, K., Shinya, Y., Takeoka, S. and Shimizu, I., Jpn. J. Appl. Phys. 34, p. 442(1995)CrossRefGoogle Scholar
4. Yoshino, K., Futako, W., Wasai, Y. and Shimizu, I., Mat. Res. Soc. Symp. Proc. 420, p. 335 (1996)CrossRefGoogle Scholar
5. Williamson, D., private communication.Google Scholar
6. Mahan, A.H., Nelson, B.P., Salamon, S. and Crandall, R.S., J. Non-Cryst. Solids 137&138, p. 657 (1991)CrossRefGoogle Scholar
7. Goto, M., Toyoda, H., Kitagawa, M., Hirao, T. and Sugai, H., Jpn. J. Appl. Phys. 35, p. y1009 (1996)CrossRefGoogle Scholar

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