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Integration Issues for Low Dielectric Constant Materials in each Generation of ULSI's

Published online by Cambridge University Press:  10 February 2011

Hideki Gomi
Affiliation:
ULSI Device Development Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa, 229–1198 JAPAN
Koji Kishimoto
Affiliation:
ULSI Device Development Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa, 229–1198 JAPAN
Tatsuya Usami
Affiliation:
ULSI Device Development Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa, 229–1198 JAPAN
Ken-ichi Koyanagi
Affiliation:
ULSI Device Development Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa, 229–1198 JAPAN
Takashi Yokoyama
Affiliation:
ULSI Device Development Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa, 229–1198 JAPAN
Noriaki Oda
Affiliation:
ULSI Device Development Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa, 229–1198 JAPAN
Yoshihisa Matsubara
Affiliation:
ULSI Device Development Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa, 229–1198 JAPAN
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Abstract

The technologies utilizing Fluorinated Silicon Oxide (FSG, k=3.6) and Hydrogen Silsesquioxane (HSQ, k=3.0) have been established for 0.25-µm and 0.1 8-µm generation ULSIs. However, low-k materials for the next generation ULSIs, which have a dielectric constant of less than 3.0, have not become mature yet. In this paper, we review process integration issues in applying FSG and HSQ, and describe integration results and device performance using Fluorinated Amorphous Carbon (a-C:F, k=2.5) as one of the promising low-k materials for the next generation ULSIs.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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