Skip to main content Accessibility help
×
Home
Hostname: page-component-79b67bcb76-kmcbj Total loading time: 0.224 Render date: 2021-05-16T07:41:48.077Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true }

Insulator/GaN Heterostructures of Low Interfacial Density of States

Published online by Cambridge University Press:  15 March 2011

M. Hong
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
H. M. Ng
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
J. Kwo
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
A. R. Kortan
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
J. N. Baillargeon
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
K. A. Anselm
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
J. P. Mannaerts
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
A. Y. Cho
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey
C. M. Lee
Affiliation:
Department of Electrical Engineering, National Central University, Taiwan
J. I. Chyi
Affiliation:
Department of Electrical Engineering, National Central University, Taiwan
T. S. Lay
Affiliation:
Institute of Opto-Electronic Engineering, National Sun Yat-Sen University, Taiwan
F. Ren
Affiliation:
Dept. Chem. Eng. and Dept. Mat. Sci. & Eng., University of Florida, Gainesville, Forida
C. R. Abernathy
Affiliation:
Dept. Mat. Sci. & Eng., University of Florida, Gainesville, Forida
S. J. Pearton
Affiliation:
Dept. Mat. Sci. & Eng., University of Florida, Gainesville, Forida
Get access

Abstract

A review is given on insulators (oxides and nitrides) which have been deposited on GaN to form metal-insulator (oxides and nitrides)-semiconductor (MOS or MIS) diodes with a low interfacial density of states (Dit). These insulators include AlN, SiO2, Si3N4, SiO2/Ga2O3, and Ga2O3(Gd2O3). Techniques for depositing these insulators and methods for cleaning GaN surfaces prior to the insulator deposition are discussed. Recent progress on GaN MOSFET's (with SiO2/Ga2O3, and Ga2O3(Gd2O3) as gate dielectrics) and MISFET's (with AlN as a gate dielectric) is also reviewed. When exposed to room air, GaN surface is not as robust as previously thought. Therefore, preparation of a clean GaN surface for deposition of oxides and nitrides is necessary to achieve a low Dit. By heating GaN samples in UHV to clean the surfaces followed by deposition of Ga2O3(Gd2O3) and SiO2, we have achieved a low Dit with negligible hysteretic loops in the capacitance-voltage curves

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Pearton, S. J. et al. , The Electrochemical Society Interface, Summer issue, (2000).Google Scholar
2. Khan, M. A., Chen, Q., Sun, C. J., Shur, M. S., and Gelmark, B., Appl. Phys. Lett. 67, p.1429 (1995).CrossRefGoogle Scholar
3. Wu, Y.-F., Keller, B. P., Keller, S., Kapolneck, D., Kozodoy, P., DenBaars, S. P., and Mishra, U. K., Appl. Phys. Lett. 69, p.1438 (1996).CrossRefGoogle Scholar
4. Asbeck, P. M., Yu, E. T., Lau, S. S., Sullivav, G. J., Hove, J. Van, and Redwing, J. M., Electron. Lett. 33, p.1230 (1997).CrossRefGoogle Scholar
5. Binari, S. C., Kruppe, W., Dietrich, H. B., Kelner, G., Wickenden, A. E., and Freitas, J. A., Solid State Electron. 41, p.1549 (1997).CrossRefGoogle Scholar
6. Burm, J., Chu, K., Schaff, W. J., Eastman, L. F., Khan, M. A., Chen, Q., Yang, J. W., and Shur, M. S., IEEE Electron. Dev. Lett. 18, p.141 (1997).CrossRefGoogle Scholar
7. Gaska, R., Chen, Q., Yang, J., Osinsky, A., Khan, M. A., and Shur, M., IEEE Electron. Dev. Lett. 18, p.492 (1997).CrossRefGoogle Scholar
8. Akatas, O., Fan, Z. F., Botcharev, A., Mohammad, S. N., Roth, M., Jenkins, T., Kehias, L., and Morkoc, H., IEEE Electron. Dev. Lett. 18, p.293 (1997).CrossRefGoogle Scholar
9. Shur, M. S., Mat. Res. Soc. Symp. Proc. 483, p.15 (1998).CrossRefGoogle Scholar
10. Wu, Y.-F., Keller, B. P., Fini, P., Keller, S., Jenkins, T. J., Kenias, L. T., DenBaars, S. P., and Mishra, U. K., IEEE Electron. Dev. Lett. 19, p.50 (1998).CrossRefGoogle Scholar
11. Ping, A. T., Chen, Q., Yang, J. W., Khan, M. A., and Adesida, I., IEEE Electron. Dev. Lett. 19, p.54 (1998).CrossRefGoogle Scholar
12. Sullivan, G. J., Chen, M. Y., Higgins, J. A., Yang, J. W., Chen, Q., Pierson, R. C., and McDermott, B. T., IEEE Electron. Dev. Lett. 19, p.198 (1998).CrossRefGoogle Scholar
13. Sheppard, S. T., Doverspike, K., Pribble, W. L., Allen, S. T., and Palmour, J. W., 56th Annual Device Research Conference, June (1998).Google Scholar
14. Mishra, U. K. and Keller, S., Naval Research Reviews, 51, vol. 1, p.56 (1999)Google Scholar
15. Pearton, S. J., Zolper, J. C., Shul, R. J., and Ren, F., J. Appl. Phys. 86, 1 (1999).CrossRefGoogle Scholar
16. Ren, F., Lothian, J. R., Chen, Y. K., Karlicek, R., Toan, L., Schurman, M., Stall, R. A., Lee, J. W., and Pearton, S. J., Solid State Electron. 41, 1819 (1997).CrossRefGoogle Scholar
17. Abernathy, C. R., Ren, F., Pearton, S. J., Hong, M., and Marcus, M., unpublished results (1997).Google Scholar
18. Ren, F., Abernathy, C. R., MacKenzie, J. D., Gila, B. P., Pearton, S. J., Hong, M., Marcus, M., Schurman, M. J., Baca, A. G., and Shul, R. J., 1997 MRS Symp. Proc. Vol. 483, “Power Semiconductor Materials and Devices”, p. 443, Ed. by Pearton, S.J. et al. .CrossRefGoogle Scholar
19. Kawai, H., Hara, M., Nakamura, F., and Imanaga, S., Electron. Lett., 34, 592 (1998)CrossRefGoogle Scholar
20. Cassey, H. C. Jr., Fountain, G. G., Alley, R. G., Keller, B. P., and DenBaars, S. P., Appl. Phys. Lett. 68, 1850 (1996).CrossRefGoogle Scholar
21. Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T., and Umeno, M., Appl. Phys. Lett., 73, 809 (1998).CrossRefGoogle Scholar
22. Hong, M., Ng, H. M., Kwo, J., Kortan, A. R., Baillargeon, J. N., Chu, S. N. G., Mannaerts, J. P., Cho, A. Y., Ren, F., Abernathy, C. R., Pearton, S. J., and Chyi, J. I., “Compound Semiconductor Power Transistors II and State-of-the-art Program on Compound Semiconductors XXXII”, p. 103, The Electrochimical Society Proceedings volume 2000-1, Ed. by Kopf, R. F., Baca, A. G., and Chu, S. N. G..Google Scholar
23. Hashizume, T., Nakasaki, R., and Hasegawa, H., Electronic Materials Conference, (1999)Google Scholar
24. Therrien, R., Lucovsky, G., and Davis, R. F., Phys. Stat. Sol. (a) 176, 793 (1999).3.0.CO;2-V>CrossRefGoogle Scholar
25. Ren, F., Hong, M., S. Chu, N. G., Marcus, M. A., Schurman, M. J., Baca, A., Pearton, S. J., and Abernathy, C. R., Appl. Phys. Lett., 73, 3893 (1998).CrossRefGoogle Scholar
26. Ren, F., Abernathy, C. R., MacKenzie, J. D., Gila, B. P., Pearton, S. J., Hong, M., Marcus, M. A., Schurman, M. J., Baca, A. G., and Shul, R. J., Solid-State Electronics, 42, No. 12, 2177 (1998).CrossRefGoogle Scholar
27. Hong, M., Anselm, K. A., Mannaerts, J. P., Kwo, J., Cho, A. Y., Kortan, A. R., Lee, C. M., Chyi, J. I., and Lay, T. S., presented at North American Conference on Molecular Beam Epitaxy, Banff, Canada, Oct. 10-13, 1999 and to be published in J. Vac. Sci. Technol. B May/Jun issue, (2000).Google Scholar
28. Hong, M., Mannaerts, J. P., Marcus, M. A., Kwo, J., Sergent, A. M., Chou, L. J., Hsieh, K. C., and Cheng, K. Y., J. Vac. Sci. Technol. B16(3), p.1395, 1998.CrossRefGoogle Scholar
29. Smith, A. R., Ramachandran, V., Fenstra, R. M., Greve, D. W., Ptak, A., Myers, T., Sarney, W., Salamanca-Riba, L., Shin, M., and Skowronski, M., MRS Internet J. Nitride Semicond. Res. 3, 12 (1998).CrossRefGoogle Scholar
30. Hong, M., Passlack, M., Mannerts, J. P., Kwo, J., S. Chu, N. G., Moriya, N., Hou, S. Y., and Fratello, V. J., J. Vac. Sci. Technol. B, 14, 2297, (1996).CrossRefGoogle Scholar
31. Passlack, M., Hong, M., Mannaerts, J. P., Kwo, J., Opila, R. L., Chu, S. N. G., Moriya, N., and Ren, F., IEEE Transaction of Electron Devices, 44, p.214, (1997).CrossRefGoogle Scholar
32. Ren, F., Hong, M., Hobson, W. S., Kuo, J. M., Lothian, J. R., Mannaerts, J. P., Kwo, J., Chen, Y. K., and Cho, A. Y., IEEE Int'l Electron Devices Mtg (IEDM) Technical Digest, p.943, (1996), and also in Solid State Electronics, 41 (11), 1751, (1997).Google Scholar
33. Hong, M., ICSICT'98. 5th Interantional Conf. On Solid-State and Integrated-Circuit Technology, Beijing, Oct. 21-23, 1998, p.685, IEEE Catalog Number 98 EX105, Ed. by Zhang, M. and Tu, K. N..Google Scholar
34. , Kwo, Murphy, D. W., Hong, M., Opila, R. L., Mannaerts, J. P., Sergent, A. M., and Masaitis, R. L., Appl. Phys. Lett., 75, 1116 (1999).CrossRefGoogle Scholar
35. Hong, M., Lu, Z. H., Kwo, J., Kortan, A. R., Mannaerts, J. P., Krajewski, J. J., Hsieh, K. C., Chou, L. J., and Cheng, K. Y., Appl. Phys. Lett. 76 (3), p. 312, (2000).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Insulator/GaN Heterostructures of Low Interfacial Density of States
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Insulator/GaN Heterostructures of Low Interfacial Density of States
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Insulator/GaN Heterostructures of Low Interfacial Density of States
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *