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In-Situ Boron-Doped Epitaxial Silicon Films Grown by UHVRTCVD: Applications in Channel Engineering & Ultra-Shallow Junction Formation

Published online by Cambridge University Press:  10 February 2011

I. Ban
Affiliation:
ECE Department, North Carolina State University (NCSU), Raleigh, NC 27695-7911
M. C. Öztürk
Affiliation:
ECE Department, North Carolina State University (NCSU), Raleigh, NC 27695-7911
K. L. LEE
Affiliation:
IBM, T. J. Watson Research Center, Mail Stop 37–254, Yorktown Heights, NY 10598
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Abstract

A low-thermal budget, in-situ boron doped silicon epitaxy process for channel engineering and ultra shallow junction formation is presented. Ultra-thin silicon films (100–500 Å) have been deposited in a single-wafer Ultra High Vacuum Rapid Thermal Vapor Deposition (UHV-RTCVD) reactor using disilane (Si2H6), diborane (B2H6), and chlorine (Cl2) at temperatures between 750- 800°C. Boron doping can be varied five orders of magnitude (1016 cm-3 1021 cm3) with very abrupt doping transitions (∼50–70 Å/decade). Short channel (Leff =0.12 /μm) lightly-doped nchannel MOSFETs have been successfully realized free of ion-implantation in the channel region. As another application, ultra-shallow, defect-free, abrupt junctions (<500 Å) through diffusion from selectively-deposited in-situ boron doped films have been demonstrated.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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In-Situ Boron-Doped Epitaxial Silicon Films Grown by UHVRTCVD: Applications in Channel Engineering & Ultra-Shallow Junction Formation
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