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In-plane Structure and Polymorphism of Pentacene Thin Films

Published online by Cambridge University Press:  26 February 2011

Toshiyuki Kakudate ,
Noriyuki Yoshimoto  and
Yoshio Saito
Toshiyuki Kakudate
Affiliation:
t3805008@iwate-u.ac.jp, Iwate Univ., Materials Science, 4-3-5 Ueda, Morioka, 020-8551, Japan
Noriyuki Yoshimoto
Affiliation:
yoshimoto@iwate-.ac.jp, Iwate University, Morioka, 020-8551, Japan
Yoshio Saito
Affiliation:
vipsaito@kit.ac.jp, Kyoto Institute of Technology, Kyoto, 606-8585, Japan
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Abstract

The structure and polymorphism of pentacene thin films on SiO2 substrate were investigated by grazing incidence x-ray diffractometry (GIXD). The in-plane GIXD patterns were successfully obtained from vacuum deposited ultra-thin films of a few monolayers thick. The two-dimensional lattice constants were determined for both thin-film and bulk phases from the observed GIXD patterns. Considering the obtained unit cell parameters, the mechanism of the transformation between polymorphs was discussed using the classical nucleation theory.

Keywords

crystal growthorganicx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S12-52
Copyright
Copyright © Materials Research Society 2007

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