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Influence of Surface Relaxation on X-Ray Topographic Imaging of Interfacial Dislocations in Heterosystems.

Published online by Cambridge University Press:  26 February 2011

Gong-Da Yao ,
Jun Wu ,
Michael Dudley ,
Vijay Shastry  and
Peter Anderson
Gong-Da Yao
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794
Jun Wu
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794
Michael Dudley
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794
Vijay Shastry
Affiliation:
Dept. of Materials Science & Engineering, Ohio State University, Columbus Ohio 43210.
Peter Anderson
Affiliation:
Dept. of Materials Science & Engineering, Ohio State University, Columbus Ohio 43210.
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Abstract

The influence of surface relaxation on the imaging of dislocations in thin single crystal films, using white beam synchrotron radiation topography in grazing Bragg-Laue geometry, has been assessed. The predicted visibility of dislocation images on grazing Bragg- Laue topographs, for the particular case of interfacial edge dislocations in a GaAs/Si heterostructure, is shown to be strongly influenced. Agreement between predicted and observed visibility could only be obtained by incorporating the surface relaxation effects, which thus strongly influence the depth sensitivity of the technique, i.e. the ability to pinpoint the depth of a dislocation. Dislocation image widths are also influenced by these effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 707
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Yao, G.-D., Dudley, M. and Wu, J., J. X-ray Science and Technology, 2, 195, (1990).Google Scholar
[2] Dudley, M., Wu, J. and Yao, G.-D., Nucl. Instr. & Meth., B40/41, 388, (1989).Google Scholar
[3] Dudley, M., Yao, G.-D., Wu, J., Liu, H.-Y. and Kao, Y.C., Mat. Res. Soc. Symp. Proc., 160, 469, (1990).CrossRefGoogle Scholar
[4] Dudley, M., Yao, G.-D., Wu, J. and Liu, H.-Y., Mat. Res. Soc. Symp. Proc., 163, 1031, (1990).Google Scholar
[5] Dudley, M., Yao, G.-D., Paine, D., Howard, D. and Sacks, R.N., submitted to Mater. Sci. & Engin. B, (1990).Google Scholar
[6] Dudley, M., Yao, G.-D., Paine, D., Howard, D. and Sacks, R.N., to be published in Mat. Res. Soc. Symp. Proc., 209, (1991).Google Scholar
[7] O'Hara, S., Halliwell, M.A. G. and Childs, J.B., J. Appl. Cryst., 5, 401, (1972).Google Scholar
[8] Halliwell, M.A.G., Childs, J.B. and O'Hara, S., Proc. 1972 Symp. on GaAs, Paper 11, pp. 98.Google Scholar
[9] Petroff, J.F., Sauvage, M., Riglet, P. and Hashizume, H., Phil. Mag. A, 42, 319, (1980).Google Scholar
[10] Riglet, P., Sauvage, M., Petroff, J.F. and Epelboin, Y., Phil. Mag. A, 42, 339, (1980).Google Scholar
[11] Tucker, M.D., Phil. Mag., 19, 1141, (1969).Google Scholar
[12] Miltat, J. and Bowen, D.K., J. Appl. Cryst., 8, 657, (1975).Google Scholar
[13] Hirth, J.P. and Lothe, J., “Theory of Dislocations”, p.78, (1982).Google Scholar
[14] Suo, Z. and Hutchinson, J.W., Int. J. Fracture, 43, 1, (1990).Google Scholar
[15] Muskhelishvili, N.I., “Some Basic Problems of the Mathematical Theory of Elasticity”, Noordhof Ltd., Groningen, Netherlands, (1963).Google Scholar
[16] Dundurs, J., J. Appl. Mech., 36, 650, (1969).Google Scholar
[17] Miltat, J. and Dudley, M., J. Appl. Cryst., 13, 555, (1980).Google Scholar