Skip to main content Accessibility help
×
Home
Hostname: page-component-544b6db54f-rcd7l Total loading time: 0.353 Render date: 2021-10-21T03:16:47.077Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Influence of Surface Relaxation and Multi-Dislocation Strain Field Interactions on X-ray Topographic Images of Dislocations in Semiconductor Materials

Published online by Cambridge University Press:  03 September 2012

Jun Wu
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794
Thomas Fannin
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794
Michael Dudley
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794
Vijay Shastry
Affiliation:
Dept. of Materials Science & Engineering, Ohio State University, Columbus Ohio 43210
Peter Anderson
Affiliation:
Dept. of Materials Science & Engineering, Ohio State University, Columbus Ohio 43210
Get access

Abstract

Analysis of the white beam synchrotron x-ray topographic contrast behavior of screw dislocations comprising slip bands in silicon, observed under low absorption conditions, is presented. For both individual and groups of dislocations, observed “Direct Image” contrast at the surface intersections of dislocation lines, on reflections for which g·b=0, could be accounted for using equi-misorientation contour analysis using displacement fields which take surface relaxation effects into account. This contrast is shown to be a sensitive function of the local stress environment. In addition, diffuse area contrast observed within and in the vicinity of slip bands on such reflections is also observed to be very sensitive to long range strain fields associated with adjacent slip bands and other defects in the local slip band environment.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Miltat, J., and Bowen, D. K., J. Phys., Paris, 40, 389, (1979).Google Scholar
[2] Dudley, M., Miltat, J., and Bowen, D. K., Phil. Mag. A50, 487, (1984).Google Scholar
[3] Dudley, M., Wang, F. F. Y., Fanning, T., Tolis, G., Wu, J. and Hodul, D. T., Mater. Lett., 10, 87, (1990).CrossRefGoogle Scholar
[4] Dudley, M., Wang, F. F. Y., Fanning, T., Tolis, G., Wu, J. and Hodul, D. T., Mat. Res. Soc. Symp. Proc, 209, 511, (1990).CrossRefGoogle Scholar
[5] Fanning, T., Dudley, M., Wang, F. F. Y., Gordon-Smith, D., and Hodul, D. T., Mat. Res. Soc. Symp. Proc, 225, 301, (1991).CrossRefGoogle Scholar
[6] Authier, A., Advanc. X-ray Anal., 10, 9, (1967).Google Scholar
[7] Miltat, J. E. A. and Bowen, D. K., J. Appl. Cryst., 8, 657, (1975).CrossRefGoogle Scholar
[8] Yoffe, E. H., Phil. Mag. 6, 1147, (1961).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Influence of Surface Relaxation and Multi-Dislocation Strain Field Interactions on X-ray Topographic Images of Dislocations in Semiconductor Materials
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Influence of Surface Relaxation and Multi-Dislocation Strain Field Interactions on X-ray Topographic Images of Dislocations in Semiconductor Materials
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Influence of Surface Relaxation and Multi-Dislocation Strain Field Interactions on X-ray Topographic Images of Dislocations in Semiconductor Materials
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *