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Influence of Nitrogen Bonds on electrical properties of HfAlOx(N) films fabricated through LL-D&A process using NH3

Published online by Cambridge University Press:  01 February 2011

Kunihiko Iwamaoto
Affiliation:
MIRAI project, Association of Super-Advanced Electronic Technologies (ASET), AIST, Tsukuba SCR Building, Tsukuba, 305–8569, Japan
Tomoaki Nishimura
Affiliation:
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institution of Advanced Industrial Science and Technology (AIST), Japan
Koji Tominaga
Affiliation:
MIRAI project, Association of Super-Advanced Electronic Technologies (ASET), AIST, Tsukuba SCR Building, Tsukuba, 305–8569, Japan
Tetsuji Yasuda
Affiliation:
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institution of Advanced Industrial Science and Technology (AIST), Japan
Koji Kimoto
Affiliation:
Advanced Material Laboratory, National Institution for Materials Science (NIMS), Japan
Toshihide Nabatame
Affiliation:
MIRAI project, Association of Super-Advanced Electronic Technologies (ASET), AIST, Tsukuba SCR Building, Tsukuba, 305–8569, Japan
Akira Toriumi
Affiliation:
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institution of Advanced Industrial Science and Technology (AIST), Japan Department of Materials Science, School of Engineering, The University of Tokyo, Japan
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Abstract

We have investigated the influence of nitrogen incorporation into the HfAlO x film prepared by LL-D&A process with NH3 annealing step on structural change and electrical properties. Also, we have evaluated the effects of PDA treatment on electrical properties. Nitrogen concentration in HfAlO x (N) film was enhanced with increasing the NH3 annealing temperature. The shift of Hf 4f average binding energy towards lower side was observed in proportion to nitrogen concentration in HfAlO x (N) film. This result indicates the partial change of the local coordination from O-Hf-O to O-Hf-N. The increase of O-Hf-N component drastically degraded the gate leakage current in HfAlO x (N) film. Nitrogen atoms still maintained in HfAlO x (N) film even after PDA at 850°C in O2 ambient. PDA treatment at higher temperature after D&A(NH3) process improved the flat-band voltage shift and the electron mobility.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

[1] Lee, S.J. et al., IEEE Int. Electron Device Mtg., p. 223 (2000).Google Scholar
[2] Jung, H. S. et al., IEEE Int. Electron Device Mtg. p. 853 (2002).Google Scholar
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[8] Tominaga, K. et al., Extended Abstract SSDM p. 48 (2003).Google Scholar
[9] Nishimura, T. et al., Extended Abstract IWGI p. 180 (2003).Google Scholar

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Influence of Nitrogen Bonds on electrical properties of HfAlOx(N) films fabricated through LL-D&A process using NH3
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Influence of Nitrogen Bonds on electrical properties of HfAlOx(N) films fabricated through LL-D&A process using NH3
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Influence of Nitrogen Bonds on electrical properties of HfAlOx(N) films fabricated through LL-D&A process using NH3
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