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The Influence of Defects on Compatibility and Yield of the HfO2-PolySilicon Gate Stack for CMOS Integration

Published online by Cambridge University Press:  11 February 2011

V. S. Kaushik
Affiliation:
International Sematech, 2706 Montopolis Drive, Austin Texas 78741
S. DeGendt
Affiliation:
Inter-university MicroElectronic Center (IMEC), Kapeldreef 75, 3000 Leuven, Belgium.
R. Carter
Affiliation:
Inter-university MicroElectronic Center (IMEC), Kapeldreef 75, 3000 Leuven, Belgium.
M. Claes
Affiliation:
Inter-university MicroElectronic Center (IMEC), Kapeldreef 75, 3000 Leuven, Belgium.
E. Rohr
Affiliation:
Inter-university MicroElectronic Center (IMEC), Kapeldreef 75, 3000 Leuven, Belgium.
L. Pantisano
Affiliation:
Inter-university MicroElectronic Center (IMEC), Kapeldreef 75, 3000 Leuven, Belgium.
J. Kluth
Affiliation:
International Sematech, 2706 Montopolis Drive, Austin Texas 78741
A. Kerber
Affiliation:
International Sematech, 2706 Montopolis Drive, Austin Texas 78741
V. Cosnier
Affiliation:
International Sematech, 2706 Montopolis Drive, Austin Texas 78741
E. Cartier
Affiliation:
International Sematech, 2706 Montopolis Drive, Austin Texas 78741
W. Tsai
Affiliation:
International Sematech, 2706 Montopolis Drive, Austin Texas 78741
E. Young
Affiliation:
International Sematech, 2706 Montopolis Drive, Austin Texas 78741
M. Green
Affiliation:
International Sematech, 2706 Montopolis Drive, Austin Texas 78741
J. Chen
Affiliation:
International Sematech, 2706 Montopolis Drive, Austin Texas 78741
S-A. Jang
Affiliation:
International Sematech, 2706 Montopolis Drive, Austin Texas 78741
S. Lin
Affiliation:
International Sematech, 2706 Montopolis Drive, Austin Texas 78741
A. Delabie
Affiliation:
Inter-university MicroElectronic Center (IMEC), Kapeldreef 75, 3000 Leuven, Belgium.
S.V. Elshocht
Affiliation:
Inter-university MicroElectronic Center (IMEC), Kapeldreef 75, 3000 Leuven, Belgium.
Y. Manabe
Affiliation:
Inter-university MicroElectronic Center (IMEC), Kapeldreef 75, 3000 Leuven, Belgium.
O. Richard
Affiliation:
Inter-university MicroElectronic Center (IMEC), Kapeldreef 75, 3000 Leuven, Belgium.
C. Zhao
Affiliation:
Inter-university MicroElectronic Center (IMEC), Kapeldreef 75, 3000 Leuven, Belgium.
H. Bender
Affiliation:
Inter-university MicroElectronic Center (IMEC), Kapeldreef 75, 3000 Leuven, Belgium.
M. Caymax
Affiliation:
Inter-university MicroElectronic Center (IMEC), Kapeldreef 75, 3000 Leuven, Belgium.
M. Heyns
Affiliation:
Inter-university MicroElectronic Center (IMEC), Kapeldreef 75, 3000 Leuven, Belgium.
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Abstract

Hafnium-based dielectrics are under wide consideration for high-K gate dielectric applications. Since the gate electrode typically used in CMOS integration consists of polysilicon with n- or p-type dopants, compatibility of the HfO2 layer with the polySi deposition and dopant activation steps is critical. Capacitors were fabricated with HfO2 films deposited by ALD and MOCVD, and using polysilicon gate electrodes deposited by CVD processes. These devices showed leakage failures with yields that were observed to depend on the area, dielectric thickness and annealing conditions during the process. Investigation of the root cause of these leakage failures suggested that the leakage failures may be caused by a defect-related mechanism. The implication of this is that the leakage occurs at localized ‘defect’ sites rather than broadly through the HfO2 layer. Emission microscopy analysis and physical characterization of the HfO2 film were used to corroborate the proposed model. Defect density was observed to be strongly dependent on the processing of the dielectric film. In order to make Hf-based dielectric stacks compatible with polysilicon for conventional CMOS transistor integration with acceptable yield, further postdeposition treatment may be necessary to eliminate or cure the defects.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

[1] Hobbs, C., Tseng, H., Reid, K., Taylor, B., Dip, L., Hebert, L., Garcia, R., Hegde, R., Grant, J., Gilmer, D., Franke, A., Dhandapani, V., Azrak, M., Prabhu, L., Rai, R., Bagchi, S., Conner, J., Backer, S., Dumbuya, F., Nguyen, B., and Tobin, P., “80 nm Poly-Si Gate CMOS with HfO2 Gate Dielectric”, International Electron Devices Meeting 2001 Technical Digest, 651 (2001).Google Scholar
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The Influence of Defects on Compatibility and Yield of the HfO2-PolySilicon Gate Stack for CMOS Integration
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