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Influence of Carbon on Structural, Optical and Electrical Properties of Microcrystalline Silicon Carbide.

Published online by Cambridge University Press:  21 February 2011

F. Demichelis
Affiliation:
Dipartimento di Fisica ed Unita' INFM Politecnico di Torino (Italy)
C.F. Pirri
Affiliation:
Dipartimento di Fisica ed Unita' INFM Politecnico di Torino (Italy)
E. Tresso
Affiliation:
Dipartimento di Fisica ed Unita' INFM Politecnico di Torino (Italy)
G. DellaMea
Affiliation:
Dipartimento di Fisica ed Unita' INFM Politecnico di Torino (Italy) Laboratori INFN di Legnaro PD (Italy) Dip. Ing. Materiali Univ. di Trento (Italy)
A. Quaranta
Affiliation:
Unita' INFM Universita' di Padova (Italy)
V. Rigato
Affiliation:
Laboratori INFN di Legnaro PD (Italy) Dip. Ing. Materiali Univ. di Trento (Italy)
M. Ferraris
Affiliation:
Centro Ricerche FIAT (Orbassano TO, Italy)
P. Rava
Affiliation:
Elettrorava S.p.A (Savonera To, Italy)
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Abstract

Microcrystalline films of SiC.H have been deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) of SiH4+CH4+H2 mixtures with high power density and high H2 dilution, at variable CH4/SiH4 ratios. Their elemental composition, structural, optical and electrical properties have been investigated in order to evidence the influence of hydrogen and carbon on microcrystallinity.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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[10] Lucovsky, G. and Wang, C. - MRS Soc. Symp. Proc. 219, 377 (1991)CrossRefGoogle Scholar

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