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Inelastic Light Scattering in Zinc Germanium Diphosphide Crystals

Published online by Cambridge University Press:  10 February 2011

B. H. Bairamov
Affiliation:
Department of Solid State Physics, A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, RUSSIA, bairamov@bahish.ioffe.rssi.ru
V. K. Negoduyko
Affiliation:
Department of Solid State Physics, A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, RUSSIA, bairamov@bahish.ioffe.rssi.ru
Yurri V. Rud
Affiliation:
Department of Solid State Physics, A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, RUSSIA, bairamov@bahish.ioffe.rssi.ru
V. V. Toporov
Affiliation:
Department of Solid State Physics, A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, RUSSIA, bairamov@bahish.ioffe.rssi.ru
V. A. Voitenko
Affiliation:
Department of Physics, State Technical University, 195251, St. Petersburg, RUSSIA
P. G. Schunemann
Affiliation:
Lockheed Sanders Inc., Nashua, NH, USA
N. Fernelius
Affiliation:
Air Force Wright Laboratory, WL/MLPO, Wright-Patterson AFB, OH, USA
M. C. Ohmer
Affiliation:
Air Force Wright Laboratory, WL/MLPO, Wright-Patterson AFB, OH, USA
H. E. Jackson
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, OH 45221–0011, USA
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Abstract

The inelastic light scattering spectra of chalcopyrite structure ZnGeP2 crystals grown by an improved low temperature crystallization from the nonstoichiometric solution of this compound in the liquid Bi or liquid Tl solutions as well as grown by high temperature Bridgman technique has been investigated together with the optical absorption and electron transport measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1. Bairamov, B.H., Voitenko, V. A., Ipatova, L.P., and Toporov, V.V., Proceedings of the International Conference Held in Connection with the Celebration of Birth Century C. V. Raman and Diamond Jubilee of the Discovery of Raman Effect, edited by Banerjee, C.P. and Jha, S.S., Calcutta, World Scientific, Singapore, 1989, pp. 386393.Google Scholar
2. Bairamov, B.H., Ipatova, I.P., and Voitenko, V.A., Phys. Reports, 229, 221 (1993), Phys. Usp. 36, 392 (1994), [Usp. Fiz Nauk, 163, 67 (1993)].CrossRefGoogle Scholar
3. Bairamov, B.H., Voitenko, V.A., Ipatova, I.P., Negoduyko, V.K., and Toporov, V.V., Phys. Rev. B, 50, 14923 (1994).CrossRefGoogle Scholar
4. Bairamov, B.H., Voitenko, V.A., Ipatova, I.P., Negoduyko, V.K., and Toporov, V.V., Semiconductors, 28, 531 (1994), [Fiz. Tekh. Poluprovodn. 28, 913 (1994)].Google Scholar
5. Paetzoldt, O., Irmer, G., Monecke, J., Toporov, V.V., and Bairamov, B.B., Semicond. Sci. Technol. 9, 81 (1994).CrossRefGoogle Scholar
6. Bairamov, B.H., Voitenko, V.A., Toporov, V.V., Irmer, G., and Monecke, J., Proceedings of the International Conference on the Physics of Semiconductors, Berlin, (1996) (accepted for publication).Google Scholar
7. Shay, J.L., and Wernick, J.H., Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications, edited by Pumplin, B.R. (Pergamon Press, Oxford, 1975), p.244.Google Scholar
8. Rud', Yu.V., Semiconductors, 28, 1105 (1994), [Fiz. Tekh. Poluprovodn. 28, 633(1994)].Google Scholar
9. McCrae, J.E. Jr, Gregg, M.R., Hengehold, R.L., Yeo, Y.K., Ostedeik, P.H., Ohmer, M.C., Schunemann, P.G. and Poliak, T.M., Appl. Phys. Lett. 64, 3142, (1994).Google Scholar
10. Giles, N.C., Halliburton, L.E., Schunemann, P.G., and Poliak, T.M., Appl. Phys. Lett. 66, 1758, (1995).CrossRefGoogle Scholar

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Inelastic Light Scattering in Zinc Germanium Diphosphide Crystals
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