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Indium-assisted Growth of Si Nanowires: Perspectives on Controlled Growth for CMOS Applications

Published online by Cambridge University Press:  01 February 2011

Francesca Iacopi
Affiliation:
iacopi@imec.be, IMEC, AMPS, Kapeldreef 75, Leuven, 3001, Belgium, +3216281846, +3216281576
Yann Eichhammer
Affiliation:
yann.eichhammer@mtm.kuleuven.be, Katholieke Universiteit Leuven, Metallurgy and Materials Engineering, Leuven, 3001, Belgium
Claire Massy
Affiliation:
massclaire@gmail.com, IMEC, AMPS, Kapeldreef 75, Leuven, 3001, Belgium
Philippe M Vereecken
Affiliation:
vereeck@imec.be, IMEC, AMPS, Kapeldreef 75, Leuven, 3001, Belgium
Nele Moelans
Affiliation:
nele.moelans@mtm.kuleuven.be, Katholieke Universiteit Leuven, Metallurgy and Materials Engineering, Leuven, 3001, Belgium
Olivier Richard
Affiliation:
richard@imec.be, IMEC, AMPS, Kapeldreef 75, Leuven, 3001, Belgium
Dries Smeets
Affiliation:
dries.smeets@fys.kuleuven.be, Katholieke Universiteit Leuven, Physics, Leuven, 3001, Belgium
Bart Blanpain
Affiliation:
bart.blanpain@mtm.kuleuven.be, Katholieke Universiteit Leuven, Metallurgy and Materials Engineering, Leuven, 3001, Belgium
Stefan De Gendt
Affiliation:
stefan.degendt@imec.be, IMEC, AMPS, Kapeldreef 75, Leuven, 3001, Belgium
Marc Heyns
Affiliation:
heyns@imec.be, IMEC, AMPS, Kapeldreef 75, Leuven, 3001, Belgium
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Abstract

Semiconductor nanowires are attractive nano- building blocks for microelectronics. However, the requirements for their manufacturing and application in the microelectronics industry are very demanding. Beyond compatibility with Si technology, full control on the characteristics of the grown wires (diameter, location, crystallinity, etc..), homogeneity on wafer –scale and reproducibility are essential. In this study we review critically important challenges for a controlled process of In –mediated growth of Si nanowires. First, we stress the importance of surface type for both particle catalysts and growth substrates. Both selection and preparation of such surfaces have large impact on growth, as they influence the initiation and the driving forces for the VLS growth mechanism. Moreover, wire characteristics such as morphology, crystalline quality and growth orientation appear more difficult to control when growing from particles with sizes below 40-50nm. This limitation arises as a result of both fundamental mechanisms and more specific constrains linked to the In-Si system.

A few perspectives are given for the achievement of a controlled Si nanowire growth in a Si –technology compatible fashion.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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