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Increased Thermal Stability of Co-silicide Using Co-Ta Alloy Films

Published online by Cambridge University Press:  21 March 2011

Min-Joo Kim
Affiliation:
Department of Ceramic Engineering, Yonsei University 134 Shinchon-Dong, Seodaemoon-ku, Seoul 120-749, South Korea
Hyo-Jick Choi
Affiliation:
Department of Ceramic Engineering, Yonsei University 134 Shinchon-Dong, Seodaemoon-ku, Seoul 120-749, South Korea
Dae-Hong Ko
Affiliation:
Department of Ceramic Engineering, Yonsei University 134 Shinchon-Dong, Seodaemoon-ku, Seoul 120-749, South Korea
Ja-Hum Ku
Affiliation:
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd., Yongin-City, Kyungki-Do, Korea
Siyoung Choi
Affiliation:
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd., Yongin-City, Kyungki-Do, Korea
Kazuyuki Fujihara
Affiliation:
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd., Yongin-City, Kyungki-Do, Korea
Ho-Kyu Kang
Affiliation:
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd., Yongin-City, Kyungki-Do, Korea
Hoo-Jeung Lee
Affiliation:
Stanford University, Stanford, California 93405, USA
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Abstract

The silicidation reactions and thermal stability of Co silicide formed from Co-Ta/Si systems have been investigated. In case of Co-Ta alloy process, the formation of low resistive CoSi2phase is delayed to about 660°C, as compared to conventional Co/Si system. Moreover, the presence of Ta in Co-Ta alloy films reduces the silicidation reaction rate, resulting in the strong preferential orientation in CoSi2 films. Upon high temperature post annealing in the furnace, the sheet resistance of Co-silicide formed from Co/Si systems increases significantly, while that of Co-Ta/Si systems maintains low. This is due to the formation of TaSi2 at the grain boundaries and surface of Co-silicide films, which prevents the grain boundary migration thereby slowing the agglomeration. Therefore, from our research, increased thermal stability of Co-silicide films was successfully obtained from Co-Ta alloy process.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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