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In situ XPS investigation about the growth of the first atomic layer of Ta(N) films deposited by thermal TBTDET ALD

Published online by Cambridge University Press:  01 February 2011

Steffen Strehle
Affiliation:
steffen.strehle@tu-dresden.de, TU Dresden, Institute of Semiconductor and Microsystems Technology, Dresden, Germany
Daniela Schmidt
Affiliation:
daniela.schmidt@tu-dresden.de, TU Dresden, Institute of Semiconductor and Microsystems Technology, Dresden, Germany
Sebastian Gutsch
Affiliation:
s.gutsch@gmx.net, TU Dresden, Institute of Semiconductor and Microsystems Technology, Dresden, Germany
Martin Knaut
Affiliation:
martin.knaut@tu-dresden.de, TU Dresden, Institute of Semiconductor and Microsystems Technology, Dresden, Germany
Matthias Albert
Affiliation:
matthias.albert@tu-dresden.de, TU Dresden, Institute of Semiconductor and Microsystems Technology, Dresden, Germany
Johann W. Bartha
Affiliation:
matthias.albert@tu-dresden.de, TU Dresden, Institute of Semiconductor and Microsystems Technology, Dresden, Germany
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Abstract

Ta based films are important building blocks for modern microelectronic applications. To meet the requirements of miniaturization, atomic layer deposition appears to be an alternative technology in comparison to PVD and CVD. In the present paper investigations of a thermal TBTDET ALD process will be presented with emphasis to the first ALD reaction cycles on native silicon oxide and HF etched silicon surfaces. The investigations show that the substrate chemistry is a crucial parameter for the film growth and appears to be a key to control the ALD deposition. The investigations were done by XPS without any vacuum break between the deposition and the surface analysis.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

[1] Puurunen, R.L., J. Appl. Phys. 97 (2005) 121301 1–52CrossRefGoogle Scholar
[2] Schmidt, D., Strehle, S., Albert, M., Hentsch, W., Bartha, J.W., Microelectron. Eng. 85 (2008) 527533 CrossRefGoogle Scholar
[3] Strehle, S., Schumacher, H., Schmidt, D., Knaut, M., Albert, M., Bartha, J.W., Microelectron. Eng. 85 (2008) 2064– 2067CrossRefGoogle Scholar
[4] Briggs, D., Seah, M.P.. Practical Surface Analysis - Auger and X-ray Photoelectron Spectroscopy, Vol. 1, John Wiley & Sons 1990 Google Scholar
[5] Cumpson, P. J. and Seah, M. P., Surf. Inter. Anal. 25 (1997) 430446 3.0.CO;2-7>CrossRefGoogle Scholar
[6] Volpi, F., Cadix, L., Berthomé, G., Blanquet, E., Jourdan, N., Torres, J., Microelectron Eng. 85 (2008) 20682070 CrossRefGoogle Scholar
[7] Takeda, S., Fukawa, M., Hayashi, Y., Matsumoto, K., Thin Solid Films 339 (1999) 220224 CrossRefGoogle Scholar
[8] Kasi, S.R., Liehr, M., Thity, P.A., Dallaporta, H., Offenberg, M., Appl. Phys. Lett. 59 (1991) 108110 CrossRefGoogle Scholar

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In situ XPS investigation about the growth of the first atomic layer of Ta(N) films deposited by thermal TBTDET ALD
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In situ XPS investigation about the growth of the first atomic layer of Ta(N) films deposited by thermal TBTDET ALD
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In situ XPS investigation about the growth of the first atomic layer of Ta(N) films deposited by thermal TBTDET ALD
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