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In situ Study of Strain Relaxation Mechanisms During Lattice-mismatched InGaAs/GaAs Growth by X-ray Reciprocal Space Mapping

Published online by Cambridge University Press:  01 February 2011

Takuo Sasaki
Affiliation:
tsasaki@toyota-ti.ac.jp, Toyota Technological Institute, Nagoya, Japan
Hidetoshi Suzuki
Affiliation:
ssk@toyota-ti.ac.jp, Toyota Technological Institute, Nagoya, Japan
Akihisa Sai
Affiliation:
sd08411@toyota-ti.ac.jp, Toyota Technological Institute, Nagoya, Japan
Masamitu Takahasi
Affiliation:
mtaka@spring8.or.jp, Japan Atomic Energy Agency, Hyogo, Japan
Seiji Fujikawa
Affiliation:
seijif@spring8.or.jp, Japan Atomic Energy Agency, Hyogo, Japan
Yoshio Ohshita
Affiliation:
y_ohshita@toyota-ti.ac.jp, Toyota Technological Institute, Nagoya, Japan
Masafumi Yamaguchi
Affiliation:
masafumi@toyota-ti.ac.jp, Toyota Technological Institute, Nagoya, Japan
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Abstract

The in situ X-ray reciprocal space mapping (in situ RSM) of symmetric diffraction measurements during lattice-mismatched InGaAs/GaAs(001) growth were performed to investigate the strain relaxation mechanisms. The evolution of the residual strain and crystal quality were obtained as a function of InGaAs film thickness. Based on the results, the correlation between the strain relaxation and the dislocations during the film growth were evaluated. As a result, film thickness ranges with different relaxation mechanisms were classified, and dominant dislocation behavior in each phase were deduced. From the data obtained in in situ measurements, the quantitative strain relaxation models were proposed based on a dislocation kinetic model developed by Dodson and Tsao. Good agreement between the in situ data and the model ensured the validity of the dominant dislocation behavior deduced from the present study.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

1 Sasaki, T., Suzuki, H., Sai, A., Lee, J-H, Takahasi, M., Fujikawa, S., Arafune, K., Kamiya, I., Ohshita, Y. and Yamaguchi, M., Appl. Phys. Express 2 085501 (2009).CrossRefGoogle Scholar
2 Matthews, J. M. and Blakeslee, A.E., J. Cryst. Growth 27 118 (1974).Google Scholar
3 Dodson, B. and Tsao, J. Y., Appl. Phys. Lett. 51 1325 (1987).CrossRefGoogle Scholar
4 Beresford, R., Yin, J., Tetz, K., Chason, E., J. Vac. Sci. Technol. B 18 1431 (2000).CrossRefGoogle Scholar
5 Takahasi, M., Yoneda, Y., Inoue, H., Yamamoto, N. and Mizuki, J., Jpn. J. Appl. Phys. 41 6427 (2002).CrossRefGoogle Scholar

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In situ Study of Strain Relaxation Mechanisms During Lattice-mismatched InGaAs/GaAs Growth by X-ray Reciprocal Space Mapping
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In situ Study of Strain Relaxation Mechanisms During Lattice-mismatched InGaAs/GaAs Growth by X-ray Reciprocal Space Mapping
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In situ Study of Strain Relaxation Mechanisms During Lattice-mismatched InGaAs/GaAs Growth by X-ray Reciprocal Space Mapping
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