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Improving the Structural and Electrical Properties of Epitaxial CaF2 on Si By Rapid Thermal Anneaing

Published online by Cambridge University Press:  28 February 2011

Julia M. Phillips
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
Mary L. Manger
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
Loren Pfeiffer
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
D. C. Joy
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
T. P. Smith III
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
W. M. Augustyniak
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
K. W. West
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
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Abstract

Rapid thermal annealing (RTA) has been shown to be a useful technique for improving the epitaxial quality of CaF2 films grown on Si(100) by molecular beam epitaxy. We have modified the annealing procedure to prevent crack formation, while still maintaining high film quality. Our work also shows RTA to be useful for improving the crystalline quality, chemical stability, and electrical characteristics of CaF2 films grown on Si(111). After RTA, the crystallinity of CaF2 films on Si(111), as measured by electron channeling, is indistinguishable from bulk single crystal CaF2, and the interface state density is reduced by nearly two orders of magnitude from that found in as-grown films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1986

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Footnotes

(a)

Present address: MIT, Dept. of Materials Science & Engineering, Cambridge, MA 02139

(b)

Present address: IBM T. J. Watson Research Center, Yorktown Heights, NY 10598

References

REFERENCES

[1] Pfeiffer, L., Phillips, J. M., Smith, T. P. III, Augustyniak, W. M., and West, K. W., Appl. Phys. Lett. 46, 947 (1985).Google Scholar
[2] Phillips, J. M., Pfeiffer, L., Joy, D. C., Smith, T. P., Gibson, J. M., Augustyniak, W. M., and West, K. W., Proceedings of the First International Symposium on Silicon Molecular Beam Epitaxy, pp. 296303 (The Electrochemical Society, 1985).Google Scholar
[3] Ishiwara, H. and Asano, T., Appl. Phys. Lett. 40, 66 (1982).Google Scholar
[4] Schowalter, L. J., Fathauer, R. W., and Krusius, J. P., Proceedings of the First International Symposium on Silicon Molecular Beam Epitaxy, pp. 311314 (The Electrochemical Society, 1985).Google Scholar
[5] Phillips, J. M. et al., unpublished.Google Scholar
[6] Smith, T. P. III, Phillips, J. M., People, R., Gibson, J. M., Pfeiffer, L., and p. 1. Stiles, Proceeding of the Symposium on Thin Films and Interfaces, Materials Research Society Meeting, December, 1985.Google Scholar

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