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Improvements of a-Si:H/CsI(TI) X-RAY Detectors for Radiation Monitoring

Published online by Cambridge University Press:  21 February 2011

C. Manfredotti
Affiliation:
Experimental Physics Dept., University of Torino, Via Giuria 1, Torino, Ind Consorzio INFM, Italy
E. Vittone
Affiliation:
Experimental Physics Dept., University of Torino, Via Giuria 1, Torino, Ind Consorzio INFM, Italy
M. Turnaturi
Affiliation:
IRCI, Borgaro Torinese (TO), Italy
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Abstract

Photosensitive a-Si:H p-i-n diodes, working in photovoltaic mode, have been coupled to CsI(T1) scintillators for dosimetry applications to X-ray monitoring in the energy range from 50 keV up to 15 MeV. A “mesa” approach for p-i-n diodes has been adopted both in order to better define the geometry and to obtain very low dark current. In order to optimize the geometry, a computer program has been created which simulates light generation in the scintillator, the collection by the detector and the photovoltaic current obtained as a function of exposure rate.

Measurements have been carried out in the X-rays energy ranges 50-240 keV, at 6MeV and at 15 MeV. Detectors are linear in response and shows a good sensitivity, with the capability of measuring dose rates as low as 60 mR/h.

The agreement between experimental data and simulation outputs can be considered good.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

[1] Manfredotti, C., in Winter European Course on Amorphous Silicon, edited by Spear, W.E. and Manfredotti, C., (Folgaria, Italy, 1988).Google Scholar
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Improvements of a-Si:H/CsI(TI) X-RAY Detectors for Radiation Monitoring
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