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Improvement of the Electrical Properties of YMnO3 Thin Films in A Metal/Ferroelectric/Si Structure

Published online by Cambridge University Press:  10 February 2011

Woo-Chul Yi
Affiliation:
Seoul National Univ., Dept. of Physics, Seoul, Korea
Chang-Su Seo
Affiliation:
Seoul National Univ., Dept. of Physics, Seoul, Korea
Sook-Il Kwun
Affiliation:
Seoul National Univ., Dept. of Physics, Seoul, Korea
Jong-Gul Yoon
Affiliation:
Univ. of Suwon, Dept. of Physics, Kyung-gi-do, Korea
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Abstract

Highly (0001)-oriented films of YMnO3 were grown on n-type Si(100) substrates by a chemical solution deposition with a modified precursor solution. Spin-coated films were crystallized by rapid thermal annealing at 650 °C, and showed improved structural and electrical properties. Capacitance-voltage (C-V) measurements at 1 MHz showed a counterclockwise hysteresis, with a memory window of 1.9 V at 9 V, due to ferroelectric polarization, and a dielectric constant of 25. The effects of mobile ionic charge and effective interface charge in the C-V measurements were found to be small by investigating the bias sweep rate dependence and flat-band voltage shift, respectively. The interface trap density near the Si midgap was obtained to be about 1.3 × 1011 cm−2eV−1 through conductance measurements. Current-voltage characteristics showed a leakage current density of 16 nA/cm2 at 3 V. An asymmetric polarization-voltage (P-V) hysteresis curve became symmetric one with a remanent polarization value of 0.1 μ C/cm2 under He-Ne laser illumination. The depolarization field in the ferroelectric film and charge compensation by the light-generated minority carriers may be responsible for the observed P-V characteristics. The low temperature fabrication of this YMnO3 film showed good structural and electrical properties for application to nonvolatile ferroelectric memory devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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