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Improvement of Minority Carrier Lifetime in Thick 4H-SiC Epi-layers by Multiple Thermal Oxidations and Anneals

Published online by Cambridge University Press:  02 May 2013

Lin Cheng
Affiliation:
Cree, Inc. 4600 Silicon Drive, Durham, NC 27703
Michael J. O’Loughlin
Affiliation:
Cree, Inc. 4600 Silicon Drive, Durham, NC 27703
Alexander V. Suvorov
Affiliation:
Cree, Inc. 4600 Silicon Drive, Durham, NC 27703
Edward R. Van Brunt
Affiliation:
Cree, Inc. 4600 Silicon Drive, Durham, NC 27703
Albert A. Burk
Affiliation:
Cree, Inc. 4600 Silicon Drive, Durham, NC 27703
Anant K. Agarwal
Affiliation:
Cree, Inc. 4600 Silicon Drive, Durham, NC 27703
John W. Palmour
Affiliation:
Cree, Inc. 4600 Silicon Drive, Durham, NC 27703
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Abstract

This paper details the development of a technique to improve the minority carrier lifetime of 4H-SiC thick (≥ 100 μm) n-type epitaxial layers through multiple thermal oxidations. A steady improvement in lifetime is seen with each oxidation step, improving from a starting ambipolar carrier lifetime of 1.09 µs to 11.2 µs after 4 oxidation steps and a high-temperature anneal. This multiple-oxidation lifetime enhancement technique is compared to a single high-temperature oxidation step, and a carbon implantation followed by a high-temperature anneal, which are traditional ways to achieve high ambipolar lifetime in 4H-SiC n-type epilayers. The multiple oxidation treatment resulted in a high minimum carrier lifetime of 6 µs, compared to < 2 µs for other treatments. The implications of lifetime enhancement to high-voltage/high-current 4H-SiC power devices are also discussed.

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Copyright
Copyright © Materials Research Society 2013 

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References

Cheng, L. et al. , Mat. Sci. Forum 740742 (2013) pp. 895898 CrossRef
Klein, P. B., Mat. Sci. Forum 717720 (2012) pp. 279284 CrossRef
Hiyoshi, T. and Kimoto, T., Appl. Phys. Expr 2 (2009) 041101 CrossRef
Hayashi, T. et al. , J. Appl. Phys. 112 (2012) 064503 CrossRef
Shimizu, Y. et al. , IEEE Trans. Elec. Dev. 46 (1999) pp. 413419 CrossRef
Sung, W. et al. , Proc. ISPSD (2009) pp. 271274

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Improvement of Minority Carrier Lifetime in Thick 4H-SiC Epi-layers by Multiple Thermal Oxidations and Anneals
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