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Improvement in Surface Morphology and Crystal Epitaxial CaF2 on Si (100) Through two Mbe Growth Stages

Published online by Cambridge University Press:  28 February 2011

Yoshihiro Morimoto ,
Shoichiro Matsumoto ,
Shoji Sudo  and
Kiyoshi Yoneda
Yoshihiro Morimoto
Affiliation:
Semiconductor Research Center, Sanyo Electric Co., Ltd., 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
Shoichiro Matsumoto
Affiliation:
Semiconductor Research Center, Sanyo Electric Co., Ltd., 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
Shoji Sudo
Affiliation:
Semiconductor Research Center, Sanyo Electric Co., Ltd., 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
Kiyoshi Yoneda
Affiliation:
Semiconductor Research Center, Sanyo Electric Co., Ltd., 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
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Abstract

We report the first study on improvement in surface morphology and crystal quality of as—grown epitaxial CaF2 film on a (100) Si substrate grown through two MBE growth stages without any post-growth treatment. The degree of improvement in surfacemorphology and crystal quality depends not only on the thickness of an initial thin CaF2 film grown at the early growth stage of 550ºC but also on both the subsrate temperature and thickness of a sequential grown CaF2 film used for thesecond growth stage. Under optimum conditions, the CaF2 films exhibited high quality with an RBS/channeling minimum yield of 4%, together with a very smooth surface morphology without any other nuclel or cracks.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 413
Copyright
Copyright © Materials Research Society 1988

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References

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